參數(shù)資料
型號: L2SA812QLT1G
廠商: 樂山無線電股份有限公司
英文描述: General Purpose Transistors
中文描述: 通用晶體管
文件頁數(shù): 1/5頁
文件大?。?/td> 156K
代理商: L2SA812QLT1G
General Purpose Transistors
MAXIMUM RATINGS
Symbol
V
CEO
L
2SA812
-50
Unit
V
Collector-Emitter Voltage
Collector-Base Voltage
V
CBO
-60
V
Emitter-Base Voltage
V
EBO
-6
V
Collector current-continuoun
THERMAL CHARATEERISTICS
I
C
-150
mAdc
Symbol
P
D
Max
Unit
Total Device Dissipation FR-5 Board, (1)
T
A
=25
o
C
Derate above 25
o
C
200
mW
1.8
556
mW/
o
C
Thermal Resistance, Junction to Ambient
R
θ
JA
P
D
o
C
/
W
200
mW
mW/
o
C
2.4
417
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
R
θ
JA
Tj ,Tstg
o
C
/
W
-55 to +150
o
C
Total Device Dissipation
Alumina Substrate, (2) T
A
=25
o
C
Derate above 25
o
C
Rating
Characteristic
L2SA812-1/5
LESHAN RADIO COMPANY, LTD.
1
3
2
L2SA812*LT1
SOT-23
2
EMITTER
3
COLLECTOR
1
BASE
FEATURE
High Voltage: V
CEO
= -50 V.
Epitaxial planar type.
NPN complement: L2SC1623
Pb-Free Package is available.
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
L2SA812QLT1
M8
L2SA812QLT1G
M8
(Pb-Free)
L2SA812RLT1
M6
L2SA812RLT1G
M6
(Pb-Free)
L2SA812SLT1
M7
L2SA812SLT1G
M7
(Pb-Free)
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
Shipping
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
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