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參數(shù)資料
| 型號： | L2SA812RLT1 |
| 廠商： | 樂山無線電股份有限公司 |
| 英文描述： | General Purpose Transistors |
| 中文描述： | 通用晶體管 |
| 文件頁數(shù)： | 3/5頁 |
| 文件大小： | 156K |
| 代理商： | L2SA812RLT1 |
L2SA812-3/5
LESHAN RADIO COMPANY, LTD.
L2SA812*LT1
–0.2
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
–1.6
T
A
= 100°C
25°C
– 40°C
–50
–20
–10
–50
–2
–1
–0.5
–0.2
–0.1
0
–0.4
–0.8
–1.2
–1.6
–2.0
T
A
= 25°C
–10
–8
–6
–4
–2
0
I
C
,
(
Fig.1 Grounded emitter propagation characteristics
Fig.2 Grounded emitter output characteristics( )
Fig.3 Grounded emitter output characteristics( )
Fig.4 DC current gain vs. collector current ( )
Fig.5 DC current gain vs. collector current ( )
Fig.6 Collector-emitter saturation voltage vs.
collector current ( )
V
CE
= –10 V
V
BE
,
BASE TO EMITTER VOLTAGE(V)
I
C
,
(
V
CE
,
COLLECTOR TO EMITTER VOLTAGE (V)
–35.0
–31.5
–28.0
–24.5
–21.0
–17.5
–14.0
–10.5
–7.0
–3.5
μ
A
I
B
=0
0
–1
–2
–3
–4
–5
T
A
= 25°C
–100
–80
–60
–40
–20
0
I
C
,
(
V
CE
,
COLLECTOR TO EMITTER VOLTAGE (V)
–250
–200
–150
500
450
400
350
300
–100
–50
μ
A
I
B
=0
T
A
= 25°C
500
200
100
50
h
F
,
V
CE
= –5 V
–3V
–1V
I
C
, COLLECTOR CURRENT
(mA)
–0.2
–0.5
–1
–2
–5
–10
–20
–50
–100
T
A
= 100°C
500
200
100
50
h
F
,
V
CE
= – 6V
I
C
, COLLECTOR CURRENT
(mA)
–0.2
–0.5
–1
–2
–5
–10
–20
–50
–100
25°C
–40°C
–1
–0.5
–0.2
–0.1
–0.05
V
C
,
I
C
, COLLECTOR CURRENT
(mA)
–0.2
–0.5
–1
–2
–5
–10
–20
–50
–100
T
A
= 25°C
I
C
/I
B
= 50
20
10
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| L2SA812RLT1G | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:General Purpose Transistors |
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| L2SA812SLT1G | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:General Purpose Transistors |
| L2SB1197KQLT1 | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:Low Frequency Transistor PNP Silicon |
| L2SB1197KQLT1G | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:Low Frequency Transistor PNP Silicon |
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