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參數(shù)資料
| 型號(hào)： | L2SA812SLT1 |
| 廠商： | 樂山無線電股份有限公司 |
| 英文描述： | General Purpose Transistors |
| 中文描述： | 通用晶體管 |
| 文件頁(yè)數(shù)： | 4/5頁(yè) |
| 文件大小： | 156K |
| 代理商： | L2SA812SLT1 |
L2SA812-4/5
LESHAN RADIO COMPANY, LTD.
Fig.7 Collector-emitter saturation voltage vs.
collector current ( )
–1
–0.5
–0.2
–0.1
–0.05
V
C
,
I
C
, COLLECTOR CURRENT
(mA)
–0.2
–0.5
–1
–2
–5
–10
–20
–50
–100
T
A
= 100°C
25°C
–40°C
I
C
/I
B
= 10
L2SA812*LT1
Fig.8 Gain bandwidth product vs. emitter current
1000
500
200
100
50
f
r
,
I
E
, EMITTER CURRENT
(mA)
–0.2
–0.5
–1
–2
–5
–10
–20
–50
–100
T
A
= 25°C
V
CE
= –12V
Fig.9 Collector output capacitance vs.collector-base voltage
Emitter inputcapacitance vs. emitter-base voltage
C
o
,
–0.5
–1
–2
20
10
5
2
C
i
,
V
CB
, COLLECTOR TO BASE VOLTAGE (V)
V
EB
, EMITTER TO BASE VOLTAGE (V)
–5
–10
–20
T
A
= 25°C
f =1MHz
I
E
= 0A
I
C
= 0A
C
ib
C
ob
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| L2SB1197KQLT1 | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:Low Frequency Transistor PNP Silicon |
| L2SB1197KQLT1G | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:Low Frequency Transistor PNP Silicon |
| L2SB1197KQLT1G_11 | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:Low Frequency Transistor PNP Silicon |
| L2SB1197KRLT1 | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:Low Frequency Transistor PNP Silicon |
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