參數(shù)資料
型號: L2SC1623SLT1
廠商: 樂山無線電股份有限公司
英文描述: General Purpose Transistors
中文描述: 通用晶體管
文件頁數(shù): 1/5頁
文件大?。?/td> 204K
代理商: L2SC1623SLT1
LESHAN RADIO COMPANY, LTD.
L2SC1623-1/5
MAXIMUM RATINGS
Symbol
V
CEO
Value
50
Unit
V
Collector-Emitter Voltage
Collector-Base Voltage
V
CBO
60
V
Emitter-Base Voltage
V
EBO
7
V
Collector current-continuoun
THERMAL CHARATEERISTICS
I
C
150
mAdc
Symbol
P
D
Max
Unit
Total Device Dissipation FR-5 Board, (1)
T
A
=25
o
C
Derate above 25
o
C
225
mW
1.8
mW/
o
C
Thermal Resistance, Junction to Ambient
R
θ
JA
P
D
556
o
C
/
W
300
mW
mW/
o
C
2.4
417
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
R
θ
JA
Tj ,Tstg
o
C
/
W
-55 to +150
o
C
Total Device Dissipation
Derate above 25
o
C
Rating
Alumina Substrate, (2) TA=25
o
C
Characteristic
L2S
C1623
*LT1
General Purpose Transistors
2
EMITTER
3
COLLECTOR
1
BASE
FEATURE
High Voltage: V
CEO
= 50 V.
Epitaxial planar type.
PNP complement: L2SA812
Pb-Free Package is available.
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
L2SC1623QLT1
L5
L2SC1623QLT1G
L5
(Pb-Free)
L2SC1623RLT1
L6
L2SC1623RLT1G
L6
(Pb-Free)
L2SC1623SLT1
L7
L2SC1623SLT1G
L7
(Pb-Free)
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
Shipping
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
1
3
2
SOT– 23
相關(guān)PDF資料
PDF描述
L2SC1623SLT1G General Purpose Transistors
L2SC2411KQLT1 Medium Power Transistor NPN silicon
L2SC2411KLT1 Medium Power Transistor NPN silicon
L2SC2411KPLT1 Medium Power Transistor NPN silicon
L2SC2411KPLT1G Medium Power Transistor NPN silicon
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
L2SC1623SLT1G 制造商: 功能描述:3PIN GENERAL PURPOSE TRANSISTOR
L2SC2411KLT1 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:Medium Power Transistor NPN silicon
L2SC2411KPLT1 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:Medium Power Transistor NPN silicon
L2SC2411KPLT1G 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:Medium Power Transistor NPN silicon
L2SC2411KQLT1 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:Medium Power Transistor NPN silicon