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參數(shù)資料
| 型號(hào)： | L2SC2411KQLT1G |
| 廠商： | 樂(lè)山無(wú)線(xiàn)電股份有限公司 |
| 英文描述： | Medium Power Transistor NPN silicon |
| 中文描述： | 中功率NPN硅晶體管 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 88K |
| 代理商： | L2SC2411KQLT1G |
LESHAN RADIO COMPANY, LTD.
1
3
2
SOT– 23 (TO–236AB)
L2SC2411K*LT1
L2SC2411K*LT1-1/4
Medium Power Transistor
NPN silicon
FEATURE
Epitaxial planar type
Complementary to L2SA1036K
Pb-Free package is available
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
L2SC2411KPLT1
CP
3000/Tape&Reel
L2SC2411KPLT1G
(Pb-Free)
CP
3000/Tape&Reel
L2SC2411KQLT1
CQ
3000/Tape&Reel
L2SC2411KQLT1G
(Pb-Free)
CQ
3000/Tape&Reel
L2SC2411KRLT1
CR
3000/Tape&Reel
L2SC2411KRLT1G
(Pb-Free)
CR
3000/Tape&Reel
MAXIMUM RATINGS
(T
A
= 25
°
C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Limits
40
32
5
0.5
0.2
150
-55~+150
Unit
V
V
V
A*
W
°
C
°
C
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltgae
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collcetor-emitter saturation voltage
Transition frequency
Output capacitance
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
C
ob
40
32
5
-
-
82
-
-
-
-
-
-
-
-
-
-
-
-
-
1
1
V
V
V
μ
A
μ
A
-
V
MHz
pF
I
C
=100
μ
A
I
C
=1mA
I
E
=100
μ
A
V
CB
=20V
V
EB
=4V
V
CE
=3V
I
C
/I
B
=500mA/50mA
V
CE
=5V,I
E
=-20mA,f=100MHz
V
CB
=10V,I
E
=0A,f=1MHz
390
0.4
-
-
250
6.0
*P
C
must not be exceeded.
ELECTRICAL CHARACTERISTICS(
T
A
= 25
°
C
)
Parameter
Symbol
Min.
Typ
Max.
Unit
Conditions
h
FE
values are classified as follows:
Item
P
h
FE
82~180
Q
R
120~270 180~390
2
EMITTER
3
COLLECTOR
1
BASE
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| L2SC2411KRLT1 | Medium Power Transistor NPN silicon |
| L2SC2411KRLT1G | Medium Power Transistor NPN silicon |
| L2SC2412KLT1 | General Purpose Transistors NPN Silicon |
| L2SC2412KQLT1 | General Purpose Transistors NPN Silicon |
| L2SC2412KQLT1G | General Purpose Transistors NPN Silicon |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| L2SC2411KQLT3G | 制造商:LRC 制造商全稱(chēng):Leshan Radio Company 功能描述:Medium Power Transistor NPN silicon |
| L2SC2411KRLT1 | 制造商:LRC 制造商全稱(chēng):Leshan Radio Company 功能描述:Medium Power Transistor NPN silicon |
| L2SC2411KRLT1G | 制造商: 功能描述:MEDIUM POWER TRANSISTOR NPN |
| L2SC2411KRLT3G | 制造商:LRC 制造商全稱(chēng):Leshan Radio Company 功能描述:Medium Power Transistor NPN silicon |
| L2SC2412KLT1 | 制造商:LRC 制造商全稱(chēng):Leshan Radio Company 功能描述:General Purpose Transistors NPN Silicon |
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