參數(shù)資料
型號(hào): L2SC2411KRLT1
廠商: 樂(lè)山無(wú)線電股份有限公司
英文描述: Medium Power Transistor NPN silicon
中文描述: 中功率NPN硅晶體管
文件頁(yè)數(shù): 2/4頁(yè)
文件大?。?/td> 88K
代理商: L2SC2411KRLT1
LESHAN RADIO COMPANY, LTD.
L2SC2411K*LT1-2/4
L2SC2411K*LT1
Electrical characteristic curves(T
A
= 25
°
C)
0.8
0.2
0.4
0.9
0.7
0.5
1.1
0.3
1.0
0.6
0.1
0.2
0.5
1
2
5
10
20
50
100
200
500
1000
Ta=100
O
C
25
O
C
80
O
C
25
O
C
55
O
C
V
CE
=6V
C
C
(
BASE TO EMITTER VOLTAGE : V
BE
(V)
Fig.1 Grounded emitter propagation characteristics
C
C
(
1
0
2
3
4
5
0
100
50
0.50mA
0.45mA
0.40mA
0.35mA
0.30mA
0.25mA
0.20mA
0.15mA
0.10mA
0.05mA
I
B
=
0A
Ta
=
25
O
C
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.2 Grounded emitter output characteristics(
I
)
C
C
(
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
1
0
2
3
4
5
0
500
400
300
200
100
2mA
1.8mA
1.6mA
1.4mA
1.2mA
1.0mA
0.2mA
0.4mA
0.6mA
0.8mA
I
B
=0A
Ta =25
O
C
Fig.3 Grounded emitter output characteristics(
II
)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
0.5
1
2
5
10
20
50
100
1000
200
500
0.2
0.5
1
0.02
0.05
0.1
=25
O
C
l
C
/l
B
=10
Ta
C
C
(
Fig.4 Collector-emitter saturation voltage vs. collector current
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