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參數(shù)資料
| 型號(hào)： | L2SC3356LT1 |
| 廠商： | 樂(lè)山無(wú)線電股份有限公司 |
| 英文描述： | High-Frequency Amplifier Transistor |
| 中文描述： | 高頻晶體管放大器 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 140K |
| 代理商： | L2SC3356LT1 |
TYPICAL CHARACTERISTICS (T
A
= 25 C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
200
100
0
10
20
50
100
200
50
1
5
10
50
0.5
100
150
T
A
-Ambient Temperature-
°
C
I
C
-Collector Current-mA
DC CURRENT GAIN vs.
COLLECTOR CURRENT
P
T
-
h
F
-
V
CE
= 10 V
0
0.5
5
10
15
1
5
10
50 70
I
C
-Collector Current-mA
INSERTION GAIN vs.
COLLECTOR CURRENT
|
2
|
2
-
V
CE
= 10 V
f = 1.0 GHz
0.3
0.5
1
2
0
0.5
1
2
5
10
20
30
V
CB
-Collector to Base Voltage-V
FEED-BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
C
r
-
f = 1.0 MHz
0.1
0.2
0.3
0.5
1.0
2.0
3.0
5.0
10
0
0.5 1.0
I
C
-Collector Current-mA
10
5.0
30
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
f
T
-
V
CE
= 10 V
0
10
20
0.1
0.2
0.4
0.6 0.81.0
2
f-Frequency-GHz
INSERTION GAIN, MAXIMUM GAIN
vs. FREQUENCY
G
m
-
|
2
|
2
-
V
CE
= 10 V
I
C
= 20 mA
G
max
|S
21e
|
2
Free Air
LESHAN RADIO COMPANY, LTD.
L2SC3356LT1
-
2
/
4
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| L2SC3837DW1T1 | High-Frequency Amplifier Transistor |
| L2SC3837LT1 | High-Frequency Amplifier Transistor |
| L2SC3838QT1 | High-Frequency Amplifier NPN Transistor |
| L2SC4081QT1 | General Purpose Transistors NPN Silicon |
| L2SC4081QT1G | General Purpose Transistors NPN Silicon |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| L2SC3356LT1G | 制造商:LRC 制造商全稱(chēng):Leshan Radio Company 功能描述:High-Frequency Amplifier Transistor |
| L2SC3356LT3G | 制造商:LRC 制造商全稱(chēng):Leshan Radio Company 功能描述:High-Frequency Amplifier Transistor |
| L2SC3356WT1G | 制造商:LRC 制造商全稱(chēng):Leshan Radio Company 功能描述:High-Frequency Amplifier Transistor |
| L2SC3837DW1T1 | 制造商:LRC 制造商全稱(chēng):Leshan Radio Company 功能描述:High-Frequency Amplifier Transistor |
| L2SC3837LT1 | 制造商:LRC 制造商全稱(chēng):Leshan Radio Company 功能描述:High-Frequency Amplifier Transistor |
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