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參數(shù)資料
| 型號(hào)： | L2SC3356LT3G |
| 廠商： | 樂(lè)山無(wú)線電股份有限公司 |
| 英文描述： | High-Frequency Amplifier Transistor |
| 中文描述： | 高頻晶體管放大器 |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大小： | 377K |
| 代理商： | L2SC3356LT3G |
DATA SHEET
DESCRIPTION
The
L
2SC3356
LT1
is an NPN silicon epitaxial transistor designed for
low
noise amplifier at VHF, UHF and CATV band.
It has dynamic range and good current characteristic.
FEATURES
We declare that the material of product compliance with RoHS requirements.
Low Noise and High Gain
NF = 1.1 dB TYP., G
a
= 11 dB TYP. @V
CE
= 10 V, I
C
= 7 mA, f = 1.0 GHz
High Power Gain
MAG = 13 dB TYP. @V
CE
= 10 V, I
C
= 20 mA, f = 1.0 GHz
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
20
12
3.0
100
200
150
V
V
V
mA
mW
C
C
65 to +150
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Collector Cutoff Current
I
CBO
1.0
A
V
CB
= 10 V, I
E
= 0
Emitter Cutoff Current
I
EBO
1.0
A
V
EB
= 1.0 V, I
C
= 0
DC Current Gain
h
F
E
82 170 270 V
CE
= 10 V, I
C
= 20 mA
Gain Bandwidth Product
f
T
7
GHz
V
CE
= 10 V, I
C
= 20 mA
Feed-Back Capacitance
C
re
**
0.55
1.0
pF
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
Insertion Power Gain
S
21
e
2
11.5
dB
V
CE
= 10 V, I
C
= 20 mA, f = 1.0 GHz
Noise Figure
NF
1.1
2.0
dB
V
CE
= 10 V, I
C
= 7 mA, f = 1.0 GHz
*
* The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitance bridge.
Pulse Measurement PW 350 s, Duty Cycle 2 %
LESHAN RADIO COMPANY, LTD.
Driver Marking
L2SC3356LT1G=R24
L2SC3356LT1G
1
2
3
S
OT-23
1/4
ORDERING INFORMATION
Device
Marking
Shipping
L2SC3356LT1G
3000/Tape & Reel
R24
10000/Tape & Reel
R24
L2SC3356LT3G
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| L2SC3837LT1 | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:High-Frequency Amplifier Transistor |
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