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參數(shù)資料
| 型號： | L4951 |
| 廠商： | 意法半導體 |
| 元件分類： | 基準電壓源/電流源 |
| 英文描述： | Very Low Drop Voltage Regulators(低壓差10V穩(wěn)壓器) |
| 中文描述： | 非常低壓降穩(wěn)壓器（10V的低壓差穩(wěn)壓器） |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 42K |
| 代理商： | L4951 |
FUNCTIONAL DESCRIPTION
The block diagram shows the basic structure of
the devices: the reference,the error amplifier, the
driver, the power PNP, the protection and reset
functions.
The power stage is a Lateral PNP transistor
which allows a very low dropout voltage (typ.
400mV at T
J
= 25
°
C, max. 750mV over the full
temperature range @ I
O
= 500mA). The typical
curve of the dropout voltage as a function of the
junction temperature is shown in Fig. 1 : that is
the worst case, where I
O
= 500mA.
The current consumption of the devices (quies-
cent current) are maximum 10mA - over full T -
when no loadcurrent is required.
The internal antisaturation circuit allows a drastic
reduction in the current peak which takes place
during the start up.
The three gain stages (operational amplifier,
driver and power PNP) require the external ca-
pacitor (C
omin
= 20
μ
F) to guarantee the global
stabilityof the system.
Load dump and field decay protections(
±
80V,t =
300ms), reverse voltage (– 18V) and short circuit
protection, thermal shutdown are the main fea-
tures that make the devices specially suitable for
applicationsin the automotive enviroment.
ELECTRICAL CHARACTERISTICS
(refer to the test circuit, V
i
= 14. 4V, C
o
= 47
μ
F, ESR< 10
,
R
p
= 1K
, R
L
= 1K
, –40
°
C
≤
T
J
≤
125
°
C, unlessotherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
o
Output Voltage
I
o
= 0mA to 500mA
Over Full T Range
4.80
5.00
5.20
V
T
j
= 25
°
C
4.90
5.00
5.10
V
V
i
Operating Input Voltage
I
o
= 0mA to (*) 500mA
6
26
V
V
o
Line Regulation
V
i
= 6V to 26V ;
I
o
= 5mA
2
10
mV
V
o
Load Regulation
I
o
= 5mA to 500mA
15
60
mV
V
i
–V
o
Dropout Voltage
I
o
= 500mA, T
J
= 25
°
C
Over Full T Range
0.40
0.55
0.75
V
V
I
q
Quiescent Current
I
o
= 0mA, T
J
= 25
°
C
I
o
= 0mA Over Full T
I
o
= 500mA Over Full T
5
6.5
110
10
13
180
mA
mA
mA
Temperature Output Voltage
Drift
– 0.5
mV/
°
C
SVR
Supply Volt. Rej.
I
o
= 350mA ; f = 120Hz
C
o
= 100
μ
F ;
V
i
= 12V
±
5V
pp
50
60
dB
I
sc
Output Short Circuit Current
0.50
0.80
1.50
A
(*)
For a DC voltage26 < V
i
< 37V the device is not operating
V
o
T
TEST CIRCUIT
L4945
3/6
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