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參數(shù)資料
| 型號(hào)： | L6388D013TR |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | HIGH-VOLTAGE HIGH AND LOW SIDE DRIVER |
| 中文描述： | 高壓高端和低端驅(qū)動(dòng) |
| 文件頁數(shù)： | 5/11頁 |
| 文件大?。?/td> | 562K |
| 代理商： | L6388D013TR |
5/11
L6388
3
INPUT LOGIC
Input logic is provided with an interlocking circuitry which avoids the two outputs (LVG, HVG) to be active at the
same time when both the logic input pins (LIN, HIN) are at a high logic level. In addition, to prevent cross con-
duction of the external MOSFETs, after each output is turned-off the other output cannot be turned-on before a
certain amount of time (DT) (see Figure 4).
Figure 6. Typical Rise and Fall Times vs. Load
Capacitance
time
(nsec)
Figure 7. Quiescent Current vs. Supply
Voltage
For both high and low side buffers @25C Tamb
0
1
2
3
4
5
C (nF)
0
50
100
150
200
250
Tr
D99IN1054
Tf
0
2
4
6
8
10
12
14
16 V
S
(V)
10
10
2
10
3
10
4
Iq
(
μ
A)
D99IN1055
3.1 BOOTSTRAP DRIVER
A bootstrap circuitry is needed to supply the high voltage section. This function is normally accomplished by a
high voltage fast recovery diode (fig. 8a). In the L6388 a patented integrated structure replaces the external di-
ode. It is realized by a high voltage DMOS, driven synchronously with the low side driver (LVG), with in series
a diode, as shown in fig. 8b
An internal charge pump (fig. 8b) provides the DMOS driving voltage .
The diode connected in series to the DMOS has been added to avoid undesirable turn on of it.
3.2 CBOOT selection and charging
To choose the proper C
BOOT
value the external MOS can be seen as an equivalent capacitor. This capacitor
C
EXT
is related to the MOS total gate charge :
The ratio between the capacitors C
EXT
and C
BOOT
is proportional to the cyclical voltage loss .
It has to be:
CBOOT>>>CEXT
e.g.: if Q
gate
is 30nC and V
gate
is 10V, C
EXT
is 3nF. With C
BOOT
= 100nF the drop would be 300mV.
If HVG has to be supplied for a long time, the CBOOT selection has to take into account also the leakage losses.
e.g.: HVG steady state consumption is lower than 200
μ
A, so if HVG T
ON
is 5ms, CBOOT has to supply 1
μ
C to
C
EXT
. This charge on a 1
μ
F capacitor means a voltage drop of 1V.
The internal bootstrap driver gives great advantages: the external fast recovery diode can be avoided (it usually
has great leakage current). This structure can work only if V
OUT
is close to GND (or lower) and in the meanwhile
the LVG is on. The charging time (T
charge
) of the C
BOOT
is the time in which both conditions are fulfilled and it
C
EXT
Q
V
gate
--------------
=
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| L6388DR | 功能描述:功率驅(qū)動(dòng)器IC INDUSTRIAL RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| L6388E | 功能描述:功率驅(qū)動(dòng)器IC Hi-Vltg and Lo Side Driver RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| L6388E_12 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:High-voltage high and low side driver |
| L6388ED | 功能描述:功率驅(qū)動(dòng)器IC Hi-Vltg and Lo Side Driver RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| L6388ED013TR | 功能描述:功率驅(qū)動(dòng)器IC High Volt High Low Driver RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
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