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參數(shù)資料
| 型號： | L6402ML11RI |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 128 Megabit (4 M x 32-Bit/8 M x 16-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with Versatile I/O⑩ Control |
| 中文描述： | 128兆位（4個M x 32位/八米x 16位），3.0伏的MirrorBit⑩只閃光均勻部門與通用的I / O控制記憶⑩ |
| 文件頁數(shù)： | 32/57頁 |
| 文件大?。?/td> | 433K |
| 代理商： | L6402ML11RI |
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Am29LV6402M
January 23, 2006
After the erase operation has been suspended, the
device enters the erase-suspend-read mode. The sys-
tem can read data from or program data to any sector
not selected for erasure. (The device “erase sus-
pends” all sectors selected for erasure.) Reading at
any address within erase-suspended sectors pro-
duces status information on DQ15–DQ0. The system
can use DQ7 and DQ15, or DQ6 and DQ14 and DQ2
and DQ10 together, to determine if a sector is actively
erasing or is erase-suspended. Refer to the Write Op-
eration Status section for information on these status
bits.
After an erase-suspended program operation is com-
plete, the device returns to the erase-suspend-read
mode. The system can determine the status of the
program operation using the DQ7 and DQ15 or DQ6
and DQ14 status bits, just as in the standard word pro-
gram operation. Refer to the Write Operation Status
section for more information.
In the erase-suspend-read mode, the system can also
issue the autoselect command sequence. Refer to the
Autoselect Mode and Autoselect Command Sequence
sections for details.
To resume the sector erase operation, the system
must write the Erase Resume command. Further
writes of the Resume command are ignored. Another
Erase Suspend command can be written after the chip
has resumed erasing.
Figure 7.
Erase Operation
START
Write Erase
Command Sequence
(Notes 1, 2)
Data Poll to Erasing
Bank from System
Data = FFh
No
Yes
Erasure Completed
Embedded
Erase
algorithm
in progress
Notes:
1. See Tables
10
and
11
for program command sequence.
2. See the section on DQ3 and DQ10 for information on
the sector erase timer.
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