參數(shù)資料
型號(hào): L640DU21RI
廠商: Advanced Micro Devices, Inc.
英文描述: 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileIO⑩ Control
中文描述: 64兆位(4個(gè)M x 16位),3.0伏的CMOS只均勻部門(mén)閃存與VersatileIO⑩控制記憶
文件頁(yè)數(shù): 3/57頁(yè)
文件大?。?/td> 885K
代理商: L640DU21RI
DATA SHEET
This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data
Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
Publication#
22366
Issue Date:
January 22, 2007
Rev:
C
Amendment
6
Am29LV640D/Am29LV641D
64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only
Uniform Sector Flash Memory with VersatileIO
Control
DISTINCTIVE CHARACTERISTICS
Single power supply operation
— 3.0 to 3.6 volt read, erase, and program operations
VersatileIO
control
— Device generates output voltages and tolerates data
input voltages on the DQ input/outputs as determined
by the voltage on V
IO
High performance
— Access times as fast as 90 ns
Manufactured on 0.23 μm process technology
CFI (Common Flash Interface) compliant
— Provides device-specific information to the system,
allowing host software to easily reconfigure for
different Flash devices
SecSi (Secured Silicon) Sector region
— 128-word sector for permanent, secure identification
through an 8-word random Electronic Serial Number
— May be programmed and locked at the factory or by
the customer
— Accessible through a command sequence
Ultra low power consumption (typical values at 3.0 V,
5 MHz)
— 9 mA typical active read current
— 26 mA typical erase/program current
— 200 nA typical standby mode current
Flexible sector architecture
— One hundred twenty-eight 32 Kword sectors
Sector Protection
— A hardware method to lock a sector to prevent
program or erase operations within that sector
— Sectors can be locked in-system or via programming
equipment
— Temporary Sector Unprotect feature allows code
changes in previously locked sectors
Embedded Algorithms
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
— Embedded Program algorithm automatically writes
and verifies data at specified addresses
Compatibility with JEDEC standards
— Pinout and software compatible with single-power
supply Flash
— Superior inadvertent write protection
Minimum 1 million erase cycle guarantee per sector
Package options
— 48-pin TSOP (Am29LV641DH/DL only)
— 56-pin SSOP (Am29LV640DH/DL only)
— 63-ball Fine-Pitch BGA (Am29LV640DU only)
— 64-ball Fortified BGA (Am29LV640DU only)
Erase Suspend/Erase Resume
— Suspends an erase operation to read data from, or
program data to, a sect27
— or that is not being erased, then resumes the erase
operation
Data# Polling and toggle bits
— Provides a software method of detecting program or
erase operation completion
Unlock Bypass Program command
— Reduces overall programming time when issuing
multiple program command sequences
Ready/Busy# pin (RY/BY#) (Am29LV640DU in FBGA
package only)
— Provides a hardware method of detecting program or
erase cycle completion
Hardware reset pin (RESET#)
— Hardware method to reset the device for reading array
data
WP# pin (Am29LV641DH/DL in TSOP,
Am29LV640DH/DL in SSOP only)
— At V
IL
, protects the first or last 32 Kword sector,
regardless of sector protect/unprotect status
— At V
IH
, allows removal of sector protection
— An internal pull up to V
CC
is provided
ACC pin
— Accelerates programming time for higher throughput
during system production
Program and Erase Performance (V
HH
not applied to
the ACC input pin)
— Word program time: 11 μs typical
— Sector erase time: 0.9 s typical for each 32 Kword
sector
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