參數(shù)資料
型號： L640MT10RF
廠商： Advanced Micro Devices, Inc.
英文描述： 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Boot Sector Flash Memory
中文描述： 64兆位（4個M x 16位/八米× 8位）的MirrorBit⑩3.0伏，只引導扇區(qū)閃存
文件頁數(shù)： 44/66頁
文件大?。?/td> 836K
代理商： L640MT10RF
42
Am29LV640MT/B
26190C8 February1,2007
D A T A S H E E T
ABSOLUTE MAXIMUM RATINGS
Storage Temperature
Plastic Packages . . . . . . . . . . . . . . . –65
°
C to +150
°
C
Ambient Temperature
with Power Applied. . . . . . . . . . . . . . –65
°
C to +125
°
C
Voltage with Respect to Ground
V
CC
(Note 1) . . . . . . . . . . . . . . . . .–0.5 V to +4.0 V
V
IO
. . . . . . . . . . . . . . . . . . . . . . . . .–0.5 V to +4.0 V
A9
,
OE#, ACC, and
RESET#
(Note 2). . . . . . . . . . . . . . . . . . . .–0.5 V to +12.5 V
All other pins (Note 1). . . . . . –0.5 V to V
CC
+0.5 V
Output Short Circuit Current (Note 3) . . . . . . 200 mA
Notes:
1. Minimum DC voltage on input or I/O pins is –0.5 V.
During voltage transitions, input or I/O pins can
overshoot V
SS
to –2.0 V for periods of up to 20 ns.
Maximum DC voltage on input or I/O pins is V
CC
+0.5 V.
See
Figure 10
. During voltage transitions, input or I/O
pins can overshoot to V
CC
+2.0 V for periods up to 20 ns.
See
Figure 11
.
2. Minimum DC input voltage on pins A9, OE#, ACC, and
RESET# is –0.5 V. During voltage transitions, A9, OE#,
ACC, and RESET# can overshoot V
SS
to –2.0 V for
periods of up to 20 ns. See
Figure 10
. Maximum DC
input voltage on pin A9, OE#, ACC, and RESET# is
+12.5 V which can overshoot to +14.0 V for periods up to
20 ns.
3. No more than one output can be shorted to ground at a
time. Duration of the short circuit should not be greater
than one second.
Stresses above those listed under “Absolute Maximum
Ratings” can cause permanent damage to the device. This is
a stress rating only; functional operation of the device at
these or any other conditions above those indicated in the
operational sections of this data sheet is not implied.
Exposure of the device to absolute maximum rating
conditions for extended periods can affect device reliability.
OPERATING RANGES
Industrial (I) Devices
Ambient Temperature (T
A
) . . . . . . . . . –40°C to +85°C
Supply Voltages
V
CC
for full voltage range . . . . . . . . . . . . . . . 2.7–3.6 V
V
CC
for regulated voltage range . . . . . . . . . . 3.0–3.6 V
Note:
Operating ranges define those limits between which
the functionality of the device is guaranteed.
20 ns
20 ns
+0.8 V
–0.5 V
20 ns
–2.0 V
Figure 10.
Maximum Negative
Overshoot Waveform
20 ns
20 ns
V
+2.0 V
V
+0.5 V
20 ns
2.0 V
Figure 11.
Overshoot Waveform
Maximum Positive
相關PDF資料
PDF描述
L640MT10RI 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Boot Sector Flash Memory
L640MT10VF 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Boot Sector Flash Memory
L640MT10VI 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Boot Sector Flash Memory
L640MT11NF 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Boot Sector Flash Memory
L640MT11NI 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Boot Sector Flash Memory
相關代理商/技術參數(shù)
參數(shù)描述
L640MT10RI 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Boot Sector Flash Memory
L640MT10VF 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Boot Sector Flash Memory
L640MT10VI 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Boot Sector Flash Memory
L640MT11NF 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Boot Sector Flash Memory
L640MT11NI 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Boot Sector Flash Memory
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