參數(shù)資料
型號(hào): L6585DETR
廠商: STMICROELECTRONICS
元件分類: 穩(wěn)壓器
英文描述: POWER FACTOR CONTROLLER, PDSO20
封裝: ROHS COMPLIANT, SOP-20
文件頁(yè)數(shù): 18/33頁(yè)
文件大小: 2064K
代理商: L6585DETR
L6585DE
Ballast section
25/33
6.6
Over-current protection
The appearance of over-current and hard switching events are related to a symmetrical
increase of the ohmic resistance of the two cathodes. The overall effect results in an
increased equivalent resistance of the lamp and a subsequent modification of the
resonance curve of the resonance network (see Figure 14).
Figure 14.
Resonance curve modification due to lamp ageing
The increasing of the resonant peak causes over-current that is managed by the L6585DE
in the same way as in ignition mode, but the limiting threshold and checking threshold are
respectively 1.05 V and 0.82 V.
6.7
Hard switching protection
When FRUN is equal to the peak of the resonance curve, the load seen by the half-bridge is
purely resistive. In this case, zero voltage switching is no longer present and the MOSFET
experiences high current spikes at turn on. The voltage at HBCS pin shows these peaks
whose voltage value can be greater than 3 V with a duration that depends on how close the
resonant frequency and the operating frequency are. Typical values go from 40 ns to around
200 ns. These spikes may overheat the MOSFETs but, if correctly detected, can prevent the
risk of working below the resonance frequency (capacitive mode).
The L6585DE can detect these spikes by means of a 2.75 V threshold on HBCS pin, and a
counter that shuts down the IC if 350 (typ.) subsequent spikes are detected.
This protection is blanked both during preheating and ignition.
6.8
Choke saturation protection
Ballast choke saturation implies that very high currents flow into resonance network and an
almost instant modification of the resonance curve occurs in a way that the operating point
lies immediately in capacitive mode. Steady operation in capacitive mode heavily damages
the ballast.
Old lamp
New lamp
frun
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