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參數(shù)資料
| 型號： | L6591TR |
| 廠商： | STMICROELECTRONICS |
| 元件分類： | 穩(wěn)壓器 |
| 英文描述： | SWITCHING CONTROLLER, PDSO16 |
| 封裝： | ROHS COMPLIANT, SOP-16 |
| 文件頁數(shù)： | 2/32頁 |
| 文件大?。?/td> | 560K |
| 代理商： | L6591TR |
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Electrical characteristics
L6591
10/32
Doc ID 14821 Rev 4
Symbol
Parameter
Test condition
Min
Typ
Max
Unit
DIS function
IOTP
Input bias current
VDIS = 0 to Vth
-1
A
Vth
Disable threshold
4.275
4.5
4.725
V
Oscillator and dead-time programming
fosc
Oscillation frequency
TJ = 25 °C
170
180
190
kHz
Vcc = 9.2 to 22 V
168
180
192
kHz
Vpk
Oscillator peak voltage
(1)
2.85
3
3.15
V
Vvy
Oscillator valley voltage
(1)
0.75
0.9
1.05
V
Tdead
Dead-time
(VHVG high-to-low to VLVG
low-to-high transition)
0.42
s
CT = 1 nF
1.0
Dead-time (VLVG high-to-low
to VHVG low-to-high
transition)
0.42
CT = 1 nF
1.0
Soft-start
ISSC
Charge current
TJ = 25 °C, VSS < 1.5 V,
VCOMP = 4 V
14
18
22
A
TJ = 25 °C, VSS > 1.5 V,
VCOMP = VCOMPH
3.4
4.7
5.6
ISsdis
Discharge current
VSS > 1.5 V
3.4
4.7
5.6
A
VSsclamp High saturation voltage
VCOMP = 4 V
2
V
VSSDIS
Disable level
(2) V
COMP = VCOMPH
4.85
5
5.15
V
VSSLAT
Latch-off level
VCOMP = VCOMPH
6.4
V
PFC_STOP function
Ileak
High level leakage current
VPFC_STOP = Vcc,
VCOMP = 2 V
1
A
VL
Low saturation level
IPFC_STOP = 2 mA
VCOMP = 1.5 V
0.1
V
Low-side gate driver (voltages referred to GND)
VLVGL
Output low voltage
Isink = 200 mA
1.0
V
VLVGH
Output high voltage
Isource = 5 mA
12.8
13.3
V
Isourcepk Peak source current
(2)
-0.3
A
Isinkpk
Peak sink current (2)
0.8
A
tf
Fall time
40
ns
tr
Rise time
80
ns
Table 4.
Electrical characteristics (continued)
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