參數(shù)資料
型號: L800BT90VI
廠商: Advanced Micro Devices, Inc.
英文描述: 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
中文描述: 8兆位(1 M中的x 8-Bit/512畝x 16位),3.0伏的CMOS只引導(dǎo)扇區(qū)閃存
文件頁數(shù): 27/49頁
文件大?。?/td> 859K
代理商: L800BT90VI
Am29LV800B
25
Table 2. W rite Operation Status
Notes:
1.
DQ5 switches to ‘1’ when an Embedded Program or Embedded Erase operation has exceeded the maximum timing limits.
See “DQ5: Exceeded Timing Limits” for more information.
2.
DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for further de-
tails.
Operation
Embedded Program Algorithm
Embedded Erase Algorithm
Reading within Erase
Suspended Sector
Reading within Non-Erase
Suspended Sector
Erase-Suspend-Program
DQ7
( Note 2)
DQ7#
0
DQ6
Toggle
Toggle
DQ5
( Note 1)
0
0
DQ3
N/A
1
DQ2
( Note 2)
No toggle
Toggle
RY / BY #
0
0
Standard
Mode
Erase
Suspend
Mode
1
No toggle
0
N/A
Toggle
1
Data
Data
Data
Data
Data
1
DQ7#
Toggle
0
N/A
N/A
0
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