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參數(shù)資料
| 型號(hào)： | L800BT90VK |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| 中文描述： | 8兆位（1 M中的x 8-Bit/512畝x 16位），3.0伏的CMOS只引導(dǎo)扇區(qū)閃存 |
| 文件頁數(shù)： | 22/49頁 |
| 文件大?。?/td> | 859K |
| 代理商： | L800BT90VK |
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20
Am29LV800B
to determine if a sector is actively erasing or is erase-
suspended. See “Write Operation Status” for informa-
tion on these status bits.
After an erase-suspended program operation is com-
plete, the system can once again read array data
within non-suspended sectors. The system can deter-
mine the status of the program operation using the
DQ7 or DQ6 status bits, just as in the standard
program operation. See “Write Operation Status” for
more information.
The system may also write the autoselect command
sequence when the device is in the Erase Suspend
mode. The device allows reading autoselect codes
even at addresses within erasing sectors, since the
codes are not stored in the memory array. When the
device exits the autoselect mode, the device reverts
to the Erase Suspend mode, and is ready for another
valid operation. See “Autoselect Command
Sequence” for more information.
The system must write the Erase Resume command
(address bits are “don’t care”) to exit the erase
suspend mode and continue the sector erase opera-
tion. Further writes of the Resume command are
ignored. Another Erase Suspend command can be
written after the device has resumed erasing.
Notes:
1.
See Table 1 for erase command sequence.
2.
See “DQ3: Sector Erase Timer” for more information.
Figure 4. Erase Operation
START
Write Erase
Command Sequence
Data Poll
from System
Data = FFh
No
Yes
Erasure Completed
Embedded
Erase
algorithm
in progress
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