- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄377599 > L8550LT1 (樂山無線電股份有限公司) General Purpose Transistors PNP Silicon PDF資料下載
參數(shù)資料
| 型號(hào)： | L8550LT1 |
| 廠商： | 樂山無線電股份有限公司 |
| 英文描述： | General Purpose Transistors PNP Silicon |
| 中文描述： | 通用硅晶體管進(jìn)步黨 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 50K |
| 代理商： | L8550LT1 |
LESHAN RADIO COMPANY, LTD.
L8550*LT1–1/3
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base voltage
Emitter-base Voltage
Collector current-continuoun
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR- 5 Board
(1)
T
A
= 2
5
°C
Derate above 2
5
°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,
(2)
T
A
= 2
5
°C
Derate above 2
5
°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
L8550QLT1 = 1YD L8550PLT1=85P
ELECTRICAL CHARACTERISTICS
(T
A
= 2
5
°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(I
C
= 1.0mA)
Emitter-Base Breakdown Voltage
(I
E
= 100
μ
A)
Collector-Base Breakdown voltage
(I
C
= 100
μ
A)
Collector Cutoff Current
(V
CB
= 35 V)
Emitter Cutoff Current
(V
EB
=4V)
1. FR-5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
25
40
5
800
Unit
V
V
V
mAdc
Symbol
P
D
Max
Unit
225
1.8
556
mW
mW /°C
°C/W
R
θ
JA
P
D
300
2.4
417
mW
mW /°C
°C/W
°C
R
θ
JA
T
J
, T
stg
-55 to +150
Symbol
Min
Typ
Max
Unit
V
(BR)CEO
25
–
–
V
V
(BR)EBO
5
–
–
V
V
(BR)CBO
40
–
–
V
I
CBO
–
–
150
nA
I
EBO
–
–
150
nA
SOT– 23
L8550*LT1
1
3
2
General Purpose Transistors
PNP Silicon
1
BASE
2
EMITTER
COLLECTOR
3
FEATURE
Pb-Free Package is available.
ORDERING INFORMATION
Device
Package
Shipping
L8550*LT1
SOT-23
3000/Tape&Reel
L8550*LT1G
(Pb-Free)
SOT-23
3000/Tape&Reel
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| L8550LT1G | General Purpose Transistors PNP Silicon |
| L8550PLT1 | General Purpose Transistors PNP Silicon |
| L8550QLT1 | General Purpose Transistors PNP Silicon |
| L8701P | SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR |
| L8711P | SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| L8550LT1G | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:General Purpose Transistors PNP Silicon |
| L8550PLT1 | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:General Purpose Transistors PNP Silicon |
| L8550PLT1G | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:General Purpose Transistors PNP Silicon |
| L8550PLT3G | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:General Purpose Transistors PNP Silicon |
| L8550QLT1 | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:General Purpose Transistors PNP Silicon |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。