參數(shù)資料
型號: L9610C013TR
廠商: STMICROELECTRONICS
元件分類: 穩(wěn)壓器
英文描述: SWITCHING CONTROLLER, 200 kHz SWITCHING FREQ-MAX, PDSO16
封裝: SO-16
文件頁數(shù): 13/15頁
文件大?。?/td> 430K
代理商: L9610C013TR
Obsolete
Product(s)
- Obsolete
Product(s)
L9610
7/15
4
Functional description
4.1
Pulse width comparator
A ground compatible comparator generates the PWM signal which controls the gate of the
external PowerMOS. The slopes of the leading and trailing edges of the gate driving signal
are defined by the external capacitor CS according to :
This feature allows to optimize the switching speed for the power and RFI performance best
suited for the application.
The lower limit of the duty cycle is fixed at 15 % of the ratio between the input and the
reference voltage (see Figure 3.). Input voltages lower than this value disable the internal
oscillator signal and therefore the gate driver.
4.2
Ground compatible triangle oscillator
The triangle oscillator provides the switching frequency fo set by the external capacitor CF
according to:
If the pin PWL (power limitation) is connected to ground and Vs is higher than the PWL
threshold voltage, the duty cycle and the fo frequency are reduced: this allows to transfer a
costant power to the load (see Figure 4.).
4.3
Timer and protection latch
When an overcurrent occurs, the device starts charging the external capacitor CT ; the
protection time is set according to :
After the overcurrent protection time is reached, the PowerMOS is switched-off ; this
condition is latched by setting an internal flip-flop and is externally monitored by the low
state of the MON pin.
To reset the latch the supply voltage has to fall below VSL or the device must be switched off.
4.4
Under and overvoltage sense with load dump protection
The undervoltage detection feature resets the timer and switches off the output driving
signal when the supply voltage is less than VSL.
If the supply voltage exceeds the max operating supply voltage value, an internal
comparator disables the charge pump, the oscillator and the external PowerMOS.
In both cases the thresholds are provided with suitable hysteresis values.
The load dump protection function allows the device to withstand, for a limited time, high
overvoltages. It consists of an active clamping diode which limits the circuit supply voltage to
dV
G
dt
()
K
S CS
=
f
0
K
F CF
=
t
prot
K
T CT
=
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