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參數(shù)資料
| 型號(hào)： | LB1413N |
| 元件分類： | 消費(fèi)家電 |
| 英文描述： | SPECIALTY CONSUMER CIRCUIT, PSIP9 |
| 封裝： | SIP-9 |
| 文件頁數(shù)： | 4/4頁 |
| 文件大?。?/td> | 211K |
| 代理商： | LB1413N |
2SK1566, 2SK1567
Rev.2.00 Sep 07, 2005 page 4 of 6
2.0
40
160
Case Temperature TC (°C)
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
1.6
0.4
0
80
120
0
0.8
1.2
Static Drain to Source on State
Resistance vs. Temperature
VGS = 10 V
Pulse Test
2, 5 A
ID = 10 A
–40
50
0.5
10
Drain Current ID (A)
Forward
Transfer
Admittance
y
fs
(S)
20
2
1.0
5
0.5
5
10
Forward Transfer Admittance
vs. Drain Current
VDS = 20 V
Pulse Test
0.1
1.0
2
–25
°C
TC = 25°C
75
°C
0.2
5,000
1.0
20
Reverse Drain Current IDR (A)
Reverse
Recovery
Time
t
rr
(ns)
2,000
200
0.5
2
10
50
500
1,000
Body to Drain Diode Reverse
Recovery Time
0.2
100
5
di/dt = 100 A/
s, Ta = 25°C
VGS = 0
Pulse Test
5,000
20
50
Drain to Source Voltage VDS (V)
Capacitance
C
(pF)
100
10
30
40
5
1,000
Typical Capacitance vs.
Drain to Source Voltage
0
Crss
Ciss
Coss
VGS = 0
f = 1 MHz
10
500
16
40
Gate Charge Qg (nc)
Drain
to
Source
Voltage
V
DS
(V)
Dynamic Input Characteristics
400
100
824
32
0
200
300
VDS
100 V
20
16
4
0
8
12
VDD = 100 V
250 V
400 V
ID = 7 A
250 V
VDD = 400 V
VGS
Gate
to
Source
Voltage
V
GS
(V)
1.0
20
Drain Current ID (A)
Switching
Time
t
(ns)
500
50
0.5
2
10
100
200
VGS = 10 V VDD = 30 V
PW = 2
s, duty < 1%
0.2
20
5
Switching Characteristics
td (off)
tr
td (on)
tf
5
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