參數(shù)資料
型號: LB32N20
英文描述: Smartpack N-Channel Power MOSFET Module For Aduio Application(Vdsx:200V,Vgss:14V,Id:32A)(智能封裝N溝道功率MOSFET模塊,音頻應(yīng)用(Vdsx:200V,Vgss:14V,Id:32A))
中文描述: Smartpack N溝道功率MOSFET模塊Aduio應(yīng)用(Vdsx:為200V,Vgss:14V的,身份證:32A條)(智能封裝?溝道功率MOSFET的模塊,音頻應(yīng)用(Vdsx:為200V,Vgss:14V的,身份證:第32A))
文件頁數(shù): 2/2頁
文件大小: 20K
代理商: LB32N20
C
iss
C
oss
C
rss
t
on
t
off
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn–on Time
Turn-off Time
MNT - LB32N16
MNT - LB32N20
Tentative 6/99
Magnatec.
Telephone +44(0)1455 554711.
E-mail:
magnatec@semelab.co.uk
Website:
http://www.semelab.co.uk
Fax +44(0)1455 558843.
Characteristic
Test Conditions
V
GS
= –10V
I
D
= 10mA
V
DS
= 0
V
DS
= 10V
V
GS
= 10V
Min.
160
200
±14
0.1
Typ.
Max.
Unit
BV
DSX
Drain – Source Breakdown Voltage
BV
GSS
V
GS(OFF)
V
DS(SAT)
*
Gate – Source Breakdown Voltage
Gate – Source Cut–Off Voltage
Drain – Source Saturation Voltage
I
DSX
Drain – Source Cut–Off Current
yfs*
Forward Transfer Admittance
1.5
12
10
10
2
6
* Pulse Test: Pulse Width = 300
μ
s , Duty Cycle
2%.
LB32N16
LB32N20
I
G
= ±100
μ
A
I
D
= 100mA
I
D
= 32A
V
DS
= 160V
LB32N16
V
DS
= 200V
LB32N20
I
D
= 5A
V
GS
= –10V
V
DS
= 10V
V
V
V
V
mA
S
Characteristic
Test Conditions
TYP
N-Ch
TBE
TBE
TBE
TBE
TBE
Unit
V
DS
= 10V
f = 1MHz
V
DS
= 20V
I
D
= 7A
pF
ns
STATIC CHARACTERISTICS
(T
case
= 25°C unless otherwise stated)
DYNAMIC CHARACTERISTICS
(T
case
= 25°C unless otherwise stated)
Gate 1
Gate 2
Source 2
Source 1
Drain 1
S2
G2
D
G1
S1
相關(guān)PDF資料
PDF描述
LB32N16 Smartpack N-Channel Power MOSFET Module For Aduio Application(Vdsx:160V,Vgss:14V,Id:32A)(智能封裝N溝道功率MOSFET模塊,音頻應(yīng)用(Vdsx:160V,Vgss:14V,Id:32A))
LB502MD
LB502MN
LB502VD
LB502YD
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