參數(shù)資料
型號: LBAT54CLT1
廠商: 樂山無線電股份有限公司
英文描述: Dual Series Schottky Barrier Diodes
中文描述: 雙系列肖特基二極管
文件頁數(shù): 1/3頁
文件大?。?/td> 105K
代理商: LBAT54CLT1
LESHAN RADIO COMPANY, LTD.
LBAT54CLT1–1/2
1
3
2
DEVICE MARKING
LBAT54CLT1 = KL3
MAXIMUM RATINGS
(T
J
= 125°C unless otherwise noted)
Rating
Symbol
V
R
P
F
Value
30
Unit
Volts
Reverse Voltage
Forward Power Dissipation
@ T
A
= 25°C
Derate above 25°C
Forward Current(DC)
Junction Temperature
Storage Temperature Range
225
1.8
mW
mW/°C
mA
°C
°C
I
F
T
J
T
stg
200Max
125Max
–55 to +150
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Symbol
V
(BR)R
C
T
I
R
V
F
V
F
V
F
Min
30
Typ
7.6
0.5
0.22
0.41
0.52
Max
10
2.0
0.24
0.5
0.8
Unit
Volts
pF
μ
Adc
Vdc
Vdc
Vdc
Reverse Breakdown Voltage (I
R
= 10
μ
A)
Total Capacitance (V
R
= 1.0 V, f = 1.0 MHz)
Reverse Leakage (V
R
= 25 V)
Forward Voltage (I
F
= 0.1 mAdc)
Forward Voltage (I
F
= 30 mAdc)
Forward Voltage (I
F
= 100 mAdc)
Reverse Recovery Time
(I
F
= I
R
= 10 mAdc, I
R(REC)
= 1.0 mAdc, Figure 1)
Forward Voltage (I
F
= 1.0 mAdc)
Forward Voltage (I
F
= 10 mAdc)
Forward Current (DC)
Repetitive Peak Forward Current
Non–Repetitive Peak Forward Current (t < 1.0 s)
t
rr
5.0
ns
V
F
V
F
I
F
I
FRM
I
FSM
0.29
0.35
0.32
0.40
200
300
600
Vdc
Vdc
mAdc
mAdc
mAdc
LBAT54CLT1
These Schottky barrier diodes are designed for high speed switch-
ing applications, circuit protection, and voltage clamping. Extremely
low forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
Extremely Fast Switching Speed
Low Forward Voltage — 0.35 Volts (Typ) @ I
F
= 10 mAdc
ORDERING INFORMATION
Device
LBAT54CLT1
Package
SOT–23
Shipping
3000/Tape & Reel
Preferred:
devices are recommended choices for future use and best overall value.
3
CATHODE
ANODE
1
ANODE
2
Dual Series Schottky
Barrier Diodes
SOT-23
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