參數(shù)資料
型號: LBAT54SWT1
廠商: 樂山無線電股份有限公司
英文描述: Dual Series Schottky Barrier Diodes
中文描述: 雙系列肖特基二極管
文件頁數(shù): 1/3頁
文件大小: 80K
代理商: LBAT54SWT1
LESHAN RADIO COMPANY, LTD.
LBAT54SWT1–1/3
1
3
2
DEVICE MARKING
LBAT54SWT1 = B8
MAXIMUM RATINGS
(T
J
= 125°C unless otherwise noted)
Rating
Symbol
V
R
P
F
Value
30
Unit
Volts
Reverse Voltage
Forward Power Dissipation
@ T
A
= 25°C
Derate above 25°C
Forward Current(DC)
Junction Temperature
Storage Temperature Range
200
1.6
mW
mW/°C
mA
°C
°C
I
F
T
J
T
stg
200Max
125Max
–55 to +150
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Symbol
V
(BR)R
C
T
I
R
V
F
V
F
V
F
Min
30
Typ
7.6
0.5
0.22
0.41
0.52
Max
10
2.0
0.24
0.5
1.0
Unit
Volts
pF
μ
Adc
Vdc
Vdc
Vdc
Reverse Breakdown Voltage (I
R
= 10
μ
A)
Total Capacitance (V
R
= 1.0 V, f = 1.0 MHz)
Reverse Leakage (V
R
= 25 V)
Forward Voltage (I
F
= 0.1 mAdc)
Forward Voltage (I
F
= 30 mAdc)
Forward Voltage (I
F
= 100 mAdc)
Reverse Recovery Time
(I
F
= I
R
= 10 mAdc, I
R(REC)
= 1.0 mAdc, Figure 1)
Forward Voltage (I
F
= 1.0 mAdc)
Forward Voltage (I
F
= 10 mAdc)
Forward Current (DC)
Repetitive Peak Forward Current
Non–Repetitive Peak Forward Current (t < 1.0 s)
t
rr
5.0
ns
V
F
V
F
I
F
I
FRM
I
FSM
0.29
0.35
0.32
0.40
200
300
600
Vdc
Vdc
mAdc
mAdc
mAdc
LBAT54SWT1
SOT–323 (SC–70)
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low forward
voltage reduces conduction loss. Miniature surface mount package is excel-
lent for hand held and portable applications where space is limited.
Extremely Fast Switching Speed
Low Forward Voltage — 0.35 Volts (Typ) @ I
F
= 10 mAdc
30 VOLTS DUAL SERIES
SCHOTTKYAND BARRIER
DIODES
ORDERING INFORMATION
Device
Package
SOT–323
Shipping
3000/Tape & Reel
LBAT54SWT1
Preferred:
devices are recommended choices for future use and best overall value.
3
CATHODE/ANODE
ANODE
1
CATHODE
2
Dual Series Schottky
Barrier Diodes
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