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參數(shù)資料
| 型號： | LBAV99LT1 |
| 廠商： | 樂山無線電股份有限公司 |
| 英文描述： | Dual Series Switching Diode |
| 中文描述： | 雙系列開關(guān)二極管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 109K |
| 代理商： | LBAV99LT1 |
LESHAN RADIO COMPANY, LTD.
LBAV99LT1–1/3
1
3
2
Dual Series Switching Diode
LBAV99LT1
SOT–23
3
CAHODE/ANODE
1
ANODE
2
CATHODE
DEVICE MARKING
LBAV99LT1 = A7
MAXIMUM RATINGS
(EACH DIODE)
Rating
Reverse Voltage
Forward Current
Peak Forward Surge Current
Repetitive Peak Reverse Voltage
Average Rectified Forward Current (1)
(averaged over any 20 ms period)
Repetitive Peak Forward Current
Non–Repetitive Peak Forward Current
t = 1.0
μ
s
t = 1.0 ms
t = 1.0 S
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
FR–5 Board, (1) T
A
= 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T
A
= 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
Symbol
V
R
I
F
I
FM(surge)
V
RRM
Value
70
215
500
70
Unit
Vdc
mAdc
mAdc
V
I
F(AV)
715
mA
I
FRM
I
FSM
450
mA
A
2.0
1.0
0.5
Symbol
P
D
Max
225
Unit
mW
1.8
mW/°C
R
θ
JA
P
D
556
300
°C/W
mW
2.4
mW/°C
R
θ
JA
T
J
, T
stg
417
°C/W
°C
–65 to +150
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted) (EACH DIODE)
Characteristic
OFF CHARACTERISTICS
Reverse Breakdown Voltage(I
(BR)
= 100
μ
A)
Reverse Voltage Leakage Current (V
R
= 70 Vdc)
(V
R
= 25 Vdc, T
J
= 150°C)
(V
R
= 70 Vdc, T
J
= 150°C)
Diode Capacitance
(V
R
= 0, f = 1.0 MHz)
Forward Voltage (I
F
= 1.0 mAdc)
(I
F
= 10 mAdc)
(I
F
= 50 mAdc)
(I
F
= 150 mAdc)
Reverse Recovery Time
(I
F
= I
R
= 10 mAdc, i
R(REC)
= 1.0 mAdc, R
L
= 100
) (Figure 1)
Forward Recovery Voltage
(I
F
= 10 mA, t
r
= 20 ns)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Symbol
Min
Max
Unit
V
(BR)
I
R
70
—
––
––
—
2.5
30
50
Vdc
μ
Adc
C
D
—
1.5
pF
V
F
––
—
––
––
715
855
1000
1250
mVdc
t
rr
—
6.0
ns
V
FR
—
1.75
V
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| LBAV99LT1G | 制造商: 功能描述:CHIP DIODE SOT23 (LEAD FREE) |
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