參數(shù)資料
型號: LBC807-16LT1
廠商: 樂山無線電股份有限公司
英文描述: General Purpose Transistors PNP Silicon
中文描述: 通用硅晶體管進(jìn)步黨
文件頁數(shù): 2/3頁
文件大?。?/td> 59K
代理商: LBC807-16LT1
LESHAN RADIO COMPANY, LTD.
LBC807_S-2/3
LBC807 Series
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I
C
= –10 mA)
V
(BR)CEO
–45
V
Collector–Emitter Breakdown Voltage
(V
EB
= 0, I
C
= –10
μ
A)
V
(BR)CES
–50
V
Emitter–Base Breakdown Voltage
(I
E
= –1.0
μ
A)
V
(BR)EBO
–5.0
V
Collector Cutoff Current
I
CBO
(V
CB
= –20 V)
–100
nA
(V
CB
= –20 V, T
J
= 150°C)
–5.0
μ
A
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(I
C
= –100 mA, V
CE
= –1.0 V)
h
FE
LBC807–16
LBC807–25
LBC807–40
100
160
250
250
400
600
(I
C
= –500 mA, V
CE
= –1.0 V) 40
Collector–Emitter Saturation Voltage
(I
C
= –500 mA, I
B
= –50 mA)
V
CE(sat)
–0.7
V
Base–Emitter On Voltage
V
BE(on)
–1.2
V
(I
C
= –500 mA, I
B
= –1.0 V)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(I
C
= –10 mA, V
CE
= –5.0 V
dc
, f = 100 MHz)
f
T
100
MHz
Output Capacitance
(V
CB
= –10 V, f = 1.0 MHz)
C
obo
10
pF
相關(guān)PDF資料
PDF描述
LBC807-16LT1G General Purpose Transistors PNP Silicon
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