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參數(shù)資料
| 型號： | LBSS123LT3 |
| 廠商： | 樂山無線電股份有限公司 |
| 英文描述： | N-CHANNEL POWER MOSFET |
| 中文描述： | N溝道功率MOSFET |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 105K |
| 代理商： | LBSS123LT3 |
LESHANRADIOCOMPANY,LTD.
LBSS123LT1–2/4
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0, ID = 250
μ
Adc)
V(BR)DSS
100
–
–
Vdc
Zero Gate Voltage Drain Current
(VGS = 0, VDS = 100 Vdc)
TJ = 25
°
C
TJ = 125
°
C
IDSS
–
–
–
–
15
60
μ
Adc
Gate–Body Leakage Current
(VGS = 20 Vdc, VDS = 0)
ON CHARACTERISTICS
(Note 4.)
IGSS
–
–
50
nAdc
Gate Threshold Voltage
(VDS = VGS, ID = 1.0 mAdc)
VGS(th)
0.8
–
2.8
Vdc
Static Drain–Source On–Resistance
(VGS = 10 Vdc, ID = 100 mAdc)
rDS(on)
–
5.0
6.0
Forward Transconductance
(VDS = 25 Vdc, ID = 100 mAdc)
DYNAMIC CHARACTERISTICS
gfs
80
–
–
mmhos
Input Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Ciss
–
20
–
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Coss
–
9.0
–
pF
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
SWITCHING CHARACTERISTICS(4)
Crss
–
4.0
–
pF
Turn–On Delay Time
(VCC = 30 Vdc, IC = 0.28 Adc,
VGS = 10 Vdc, RGS = 50
)
td(on)
td(off)
–
20
–
ns
Turn–Off Delay Time
–
40
–
ns
REVERSE DIODE
Diode Forward On–Voltage
(ID = 0.34 Adc, VGS = 0 Vdc)
4. Pulse Test: Pulse Width
VSD
–
–
1.3
V
300 s, Duty Cycle
2.0%.
LBSS123LT1
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PDF描述 |
|---|---|
| LBSS123LT3G | N-CHANNEL POWER MOSFET |
| LBSS138LT1 | Power MOSFET 200 mAmps, 50 Volts N-hannel SOT-3 |
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| LBSS84LT | Power MOSFET 130m Amps, 50 Volts (P-Channel SOT -23) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LBSS123LT3G | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:N-CHANNEL POWER MOSFET |
| LBSS138LT1 | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:Power MOSFET 200 mAmps, 50 Volts N-hannel SOT-3 |
| LBSS138LT1G | 制造商: 功能描述:POWER MOSFET 200MA 50V |
| LBSS138WT1G | 制造商: 功能描述:MOSFET |
| LBSS139WT1G | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:Power MOSFET 200 mAmps, 50 Volts Na??Channel SCa??70 |
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