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參數(shù)資料
| 型號(hào)： | LBSS84WT1G |
| 廠商： | 樂山無線電股份有限公司 |
| 英文描述： | Power MOSFET F30 mAmps, 50 Volts P_Channel SOT_323 |
| 中文描述： | 功率MOSFET F30 mAmps，50伏特P_Channel SOT_323 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 275K |
| 代理商： | LBSS84WT1G |
LESHAN RADIO COMPANY, LTD.
1/4
LBSS84WT1G
1
SOT –323
2
3
P–Channel SOT–323
These miniature surface mount MOSFETs reduce power loss
conserve energy, making this device ideal for use in small power
management circuitry. Typical applications are dc–dc converters, load
switching, power management in portable and battery–powered
products such as computers, printers, cellular and cordless telephones.
Energy Efficient
Miniature SOT–323 Surface Mount Package Saves Board Space
Pb-Free Package is available.
Symbol
Value
Unit
Drain–to–Source Voltage
V
DSS
50
V
dc
Gate–to–Source Voltage – Continuous
V
GS
±
20
V
dc
Drain Current
– Continuous @ T
A
= 25
°
C
– Pulsed Drain Current (t
p
≤
10
μ
s)
I
D
I
DM
130
520
mA
Total Power Dissipation @ T
A
= 25
°
C
P
D
225
mW
Operating and Storage Temperature
Range
T
J
, T
stg
– 55 to
150
°
C
Thermal Resistance – Junction–to–Ambient
R
θ
JA
T
L
556
°
C/W
Maximum Lead Temperature for Soldering
Purposes, for 10 seconds
260
°
C
Rating
MAXIMUM RATINGS
(T
J
= 25 C unless otherwise noted)
3 Drain
1
Gate
-
Source
Marking Diagram
PD
W
W = Work Week
Device
Package
Shipping
SOT-323
10000/Tape&Reel
ORDERING INFORMATION
LBSS84WT1G
SOT-323
3000/Tape&Reel
LBSS84WT1G
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR–5 Board
(Note 3.) T
A
= 25
°
C
Derate above 25
°
C
P
D
225
1.8
mW
mW/
°
C
Thermal Resistance, Junction to Ambient
R
θ
JA
P
D
556
°
C/W
Total Device Dissipation
Alumina Substrate,(Note 4.) TA = 25
°
C
Derate above 25
°
C
300
2.4
mW
mW/
°
C
Thermal Resistance, Junction to Ambient
R
θ
JA
T
J,
T
stg
417
°
C/W
Junction and Storage Temperature
–55 to
+150
°
C
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