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參數(shù)資料
| 型號(hào)： | LC3564B-70 |
| 英文描述： | x8 SRAM |
| 中文描述： | x8的SRAM |
| 文件頁(yè)數(shù)： | 3/9頁(yè) |
| 文件大小： | 145K |
| 代理商： | LC3564B-70 |
No. 5804-3/9
LC3564B, BS, BM, BT-70/10
Parameter
Symbol
Conditions
Ratings
Unit
Maximum supply voltage
V
CC
max
V
IN
V
I/O
Topr
7.0
V
Input voltage
–0.3
*
to V
CC
+ 0.3
–0.3 to V
CC
+ 0.3
–40 to +85
V
I/O voltage
V
Operating temperature
°C
Storage temperature
Tstg
–55 to +125
°C
Specifications
Absolute Maximum Ratings
at Ta = 25°C
Note: For pulse widths less than 30 ns: –3.0 V
Note: These parameters are sampled, and are not measured for every unit.
Note: For pulse widths less than 30 ns: –3.0 V
Note
*
: Reference values at V
CC
= 5 V, Ta = 25°C
[5-V Operation]
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
I/O pin capacitance
C
I/O
C
IN
V
I/O
= 0 V
V
IN
= 0 V
6
10
pF
Input pin capacitance
6
10
pF
Input and Output Capacitances
at Ta = 25°C, f = 1 MHz
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Supply voltage
V
CC
V
IH
V
IL
4.5
5.0
5.5
V
Input voltage
2.2
V
CC
+ 0.3
V
–0.3
*
+0.8
V
DC Allowable Operating Ranges
at Ta = –40 to +85°C, V
CC
= 4.5 to 5.5 V
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
*
max
Input leakage current
I
LI
V
IN
= 0 to V
CC
V
CE1
= V
IH
or V
CE2
= V
IL
or V
OE
= V
IH
or
V
WE
= V
IL
, V
I/O
= 0 to V
CC
I
OH
= –1.0 mA
I
OL
= 2.0 mA
V
CE1
≤
0.2 V, V
CE2
≥
V
CC
– 0.2 V,
I
I/O
= 0 mA, V
IN
≤
0.2 V or
V
IN
≥
V
CC
– 0.2 V
V
CE1
≤
0.2 V,
V
CE2
≥
V
– 0.2 V,
I
= 0 mA,
DUTY = 100%
–1.0
+1.0
μA
I/O leakage current
I
LO
–1.0
+1.0
μA
Output high-level voltage
V
OH
V
OL
2.4
V
Output low-level voltage
0.4
V
Ta
≤
70°C
0.01
1.0
μA
I
CCA1
V
CC
– 0.2 V/0.2 V
inputs
Ta
≤
85°C
3.0
min
LC3564B,BS, BM, BT-70
35
mA
I
CCA4
cycle
LC3564B,BS,BM,BT-10
30
1 μs cycle
4
mA
Operating supply current
I
CCA2
V
CE1
= V
IL
, V
CE2
= V
IH
, I
I/O
= 0 mA,
V
IN
= V
IH
or V
IL
V
CE1
= V
IL
,
V
CE2
= V
,
I
= 0 mA,
DUTY = 100%
7
mA
TTL inputs
min
LC3564B,BS, BM, BT-70
40
mA
I
CCA3
cycle
LC3564B,BS,BM,BT-10
35
1 μs cycle
7
mA
Standby mode supply
current
V
CC
– 0.2 V/0.2 V
inputs
V
CE2
≤
0.2 V or
V
CE1
≥
V
CC
– 0.2 V
V
CE2
≥
V
CC
– 0.2 V
V
CE2
= V
IL
or V
CE1
= V
IH
, V
IN
= 0 to V
CC
Ta
≤
70°C
0.01
1.0
μA
I
CCS1
Ta
≤
85°C
3.0
TTL inputs
I
CC2
2.0
mA
DC Electrical Characteristics
at Ta = –40 to +85°C, V
CC
= 4.5 to 5.5 V
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| LC3564BM | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:64K (8192-word ⅴ 8-bit) SRAM with OE, CE1, and CE2 Control Pins |
| LC3564BM-10 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
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| LC3564BS | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:64K (8192-word ⅴ 8-bit) SRAM with OE, CE1, and CE2 Control Pins |
| LC3564BS-10 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
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