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參數(shù)資料
| 型號(hào)： | LC35V256EM |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | 256K (32K words x 8 bits) SRAM Control pins: OE and CE |
| 中文描述： | 256K（32K字× 8位）的SRAM控制引腳：OE和行政長(zhǎng)官 |
| 文件頁(yè)數(shù)： | 3/6頁(yè) |
| 文件大?。?/td> | 46K |
| 代理商： | LC35V256EM |
Pin Functions
No. 6303-3/6
LC35V256EM, ET70W
A0 to A14
Address input
WE
Read/write control input
OE
Output enable input
CE
Chip enable input
I/O1 to I/O8
Data I/O
V
CC
, GND
Power supply, ground
Function Table
Mode
CE
OE
WE
I/O
Supply current
Read cycle
L
L
H
Data output
I
CCA
I
CCA
I
CCA
I
CCS
Write cycle
L
X
L
Data input
Output disable
L
H
H
High impedance
Unselected
H
X
X
High impedance
Parameter
Symbol
Conditions
Ratings
Unit
Maximum supply voltage
V
CC
max
V
IN
V
I/O
Topr
4.6
V
Input pin voltage
–0.3
*
to V
CC
+ 0.3
–0.3 to V
CC
+ 0.3
–10 to +70
V
I/O pin voltage
V
Operating temperature
°C
Storage temperature
Tstg
–55 to +125
°C
Specifications
Absolute Maximum Ratings
Note:
*
The minimum value is –2.0 V for pulse widths under 30 ns.
I/O Capacitances
at Ta = 25°C, f = 1 MHz
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
I/O pin capacitance
C
I/O
C
I
V
I/O
= 0 V
V
IN
= 0 V
6
10
pF
Input pin capacitance
6
10
pF
Note: All units are not tested; only samples are tested.
DC Allowable Operating Ranges
at Ta = –10 to +70°C, V
CC
= 3.0 to 3.6 V
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Supply voltage
V
CC
V
IH
V
IL
3.0
3.3
3.6
V
Input voltage
0.8V
CC
–0.3
*
V
CC
+ 0.3
0.2V
CC
V
V
Note:
*
The minimum value is –2.0 V for pulse widths under 30 ns.
Note: X indicates H or L.
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| LC35V256EM-70W | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:256K (32K words x 8 bits) SRAM Control pins: OE and CE |
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| LC35V256ET-70W | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:256K (32K words x 8 bits) SRAM Control pins: OE and CE |
| LC35W1000BM | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Asynchronous Silicon Gate 1M (131,072 words x 8 bits) SRAM |
| LC35W1000BM-10U | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述: |
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