
No. 5782-2/11
LC4608C
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
STBCLK frequency
CLK
→
LOAD setup time
LOAD
→
CLK hold time
LOAD pulse width
STBCLK
→
LOAD setup time
LOAD
→
STBCLK hold time
Clock rising edge time
f
STB
t
SL
t
HL
t
WL
t
STBL
t
LSTB
t
r
t
f
t
lr
t
lf
Tjopr
1.0
MHz
80
ns
80
ns
80
ns
80
ns
80
ns
35
ns
Clock falling edge time
35
ns
Latch rising edge time
70
ns
Latch falling edge time
70
ns
Operating temperature
–1.0
+90
°C
Continued from preceding page.
Note : 1. The figures for normal operation are a load capacitance Cpzt of 1 nF, a power supply voltage V
H
of 30 V, and a max input level COMmax of 25 V.
2. Value for V
H
= 40 V, COMmax = 40 V, frequency = 35 kHz, and duty factor = 1/100.
Note : 1. The sign is negative for incoming current and positive for outgoing current.
2. –I
IH
1 applies to the following input pins: SI0 to SI3, CLK, LAT, LOAD, STBCLK, and STB1 to STB3. –I
IH
applies to the following input pins: STB4
and STB5.
3. I
IL
1 applies to the following input pins: SI0 to SI3, CLK, LAT, LOAD, STBCLK, and STB1 to STB5.
Note : 5. The figures are for a load capacitance Cpzt of 1 nF and a power supply voltage V
H
of 30 V as measured with R
L
= 3 k
and COMn = 25 V DC.
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Input high-level voltage
V
IH
V
IL
–I
IH
1
–I
IH
2
I
IL
V
OH
V
OL
V
DD
×
0.7
V
DD
+0.3
V
DD
×
0.3
V
Input low-level voltage
–0.3
V
Input high-level current
*
2
V
DD
= 5.0 V, V
IH
= 5.0 V
V
DD
= 5.0 V, V
IH
= 5.0 V
V
DD
= 5.0 V
I
O
= –400 μA
I
O
= 400 μA
V
DD
= 5.0 V, V
H
= 40 V, COMn = 40 V,
I
OHT
= 10 mA
V
DD
= 5.0 V, V
H
= 40 V, COMn = 40 V,
–I
OHT
= 10 mA
V
H
= 40 V, V
DS
= 3 V
Within chip
×
100
2 (MMAX + MIN
0
0.5
μA
0
50
100
μA
Input low-level current
*
3
0
0.5
μA
Output high- level voltage
V
DD
– 0.5
V
Output low-level voltage
0.5
V
Output high-level current transmission gate
voltage
V
OHT
39
39.4
V
Output low-level current transmission gate
voltage
V
OLT
0.6
1.0
V
Transmission gate on resistance
R
ON
60
100
Transmission gate on resistance variation
Rx
–15
+15
Current drain
I
DD
1
±INL
V
DD
– GND, fclk = 3.5 MHz, f
Sln
= 1.75 MHz
Leakage current between pins
–15
+15
μA
Leakage current between pins
0
10
Output leakage current
I
LEAK
V
DD
= 5.0 V, V
H
= 42 V
0
100
μA
Electrical Characteristics
DC Characteristics
at V
DD
= 5.0 V±10%, Tjopr = –10 to +90°C unless otherwise specified
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
SOn output rising edge time
t
or
t
of
t
dor
t
dof
t
sor
t
sof
C
L
= 10 pF
C
L
= 10 pF
*
5
50
ns
SOn input rising edge time
50
ns
STBn
→
DOn propagation delay time
1.0
μs
*
5
1.0
μs
CLK
→
SOn propagation delay time
C
L
= 10 pF
C
L
= 10 pF
140
ns
140
ns
Switching Characteristics
at V
DD
= 5.0 V±10%, Tjopr = –10 to +90°C unless otherwise specified