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參數(shù)資料
| 型號： | LD3985G15R |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | ULTRA LOW DROP-LOW NOISE BICMOS VOLTAGE REGULATORS LOW ESR CAPACITORS COMPATIBLE |
| 中文描述： | 超低壓降低噪聲BICMOS工藝電壓調(diào)節(jié)器兼容低ESR電容 |
| 文件頁數(shù)： | 4/14頁 |
| 文件大?。?/td> | 393K |
| 代理商： | LD3985G15R |
LD3985 SERIES
4/14
Table 5: Electrical Characteristics For LD3985
(T
j
= 25°C, V
I
= V
O(NOM)
+0.5V, C
I
= 1
μ
F,
C
BYP
= 10nF, I
O
= 1mA, V
INH
= 1.4V, unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
I
V
O
Operating Input Voltage
Output Voltage < 2.5V
2.5
-50
-75
-2
-3
-0.1
-0.19
6
V
I
O
= 1 mA
T
J
= -40 to 125°C
I
O
= 1 mA
T
J
= -40 to 125°C
V
I
= V
O(NOM)
+ 0.5 to 6 VT
J
= -40 to 125°C
V
O
= 4.7 to 5V
I
O
= 1 mA to 150mA
T
J
= -40 to 125°C
I
O
= 1 mA to 150mA
T
J
= -40 to 125°C (for Flip-Chip)
I
O
= 1 mA to 150mA, T
J
= -40 to 125°C
(for SOT23-5L/TSOT23-5L), V
O
≥
2.5V
50
75
2
3
0.1
0.19
0.008
mV
V
O
Output Voltage
≥
2.5V
% of
V
O(NOM)
V
O
Line Regulation (Note 1)
%/V
V
O
Load Regulation
V
O
< 2.5V
0.002
%/mA
V
O
Load Regulation
V
O
≥
2.5V
0.0004
0.002
%/mA
0.0025
0.005
V
O
Output AC Line Regulation V
I
= V
O(NOM)
+ 1 V, I
O
= 150mA,
t
R
= t
F
= 30μs
Quiescent Current
ON MODE: V
INH
= 1.2V
I
O
= 0
I
O
= 0 to 150mA
I
O
= 0 to 150mA
OFF MODE: V
INH
= 0.4V
T
J
= -40 to 125°C
Dropout Voltage (NOTE 1) I
O
= 1mA
I
O
= 1mA
I
O
= 50mA
I
O
= 50mA
I
O
= 100mA
I
O
= 100mA
I
O
= 150mA
I
O
= 150mA
Short Circuit Current
R
L
= 0
Supply Voltage Rejection
V
I
= V
O(NOM)
+0.25V ±
V
RIPPLE
= 0.1V, I
O
= 50mA
V
O(NOM)
< 2.5V, V
I
= 2.55V
Peak Output Current
V
O
≥
V
O(NOM)
- 5%
Inhibit Input Logic Low
V
I
= 2.5V to 6V
125°C
Inhibit Input Logic High
Inhibit Input Current
V
INH
= 0.4V
Output Noise Voltage
B
W
= 10 Hz to 100 KHz
Turn On Time (Note 4)
C
BYP
= 10 nF
Thermal Shutdown
Note 5
1.5
mV
PP
I
Q
I
O
= 0
85
μA
T
J
= -40 to 125°C
150
170
T
J
= -40 to 125°C
250
0.003
1.5
V
DROP
0.4
mV
T
J
= -40 to 125°C
2
20
T
J
= -40 to 125°C
35
45
T
J
= -40 to 125°C
70
60
T
J
= -40 to 125°C
100
I
SC
SVR
600
60
50
mA
dB
f = 1KHz
f = 10KHz
I
O(PK)
V
INH
300
550
mA
V
T
J
= -40 to
0.4
1.2
I
INH
eN
t
ON
T
SHDN
V
I
= 6V
±1
30
100
160
nA
C
O
= 1
μ
F
μ
V
RMS
μ
s
°C
250
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|---|---|
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