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參數(shù)資料
| 型號： | LD4250 |
| 廠商： | Powerex Power Semiconductors |
| 英文描述： | POW-R-BLOK Dual SCR/Diode Isolated Module (500 Amperes / Up to 1600 Volts) |
| 中文描述： | 的POW - r -臺BLOk反應(yīng)腔雙SCR /二極管隔離模塊（五〇 〇安培/高達1600伏特） |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 102K |
| 代理商： | LD4250 |
Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 (724) 925-7272
POW-R-BLOK
TM
Dual SCR/Diode Isolated Module
500 Amperes / Up to 1600 Volts
Revision Date: 12/04/2002
LD42__50
Electrical Characteristics, T
J
=25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Max.
80
Units
Repetitive Peak Forward Leakage Current
I
DRM
Up to 1600V, T
J
=130°C
mA
Repetitive Peak Reverse Leakage Current
I
RRM
Up to 1600V, T
J
=130°C
80
mA
Peak On-State Voltage
V
TM
/V
FM
I
TM
/I
FM
=1500A
1.30
V
Threshold Voltage, Low-level
Slope Resistance, Low-level
V
(TO)1
r
T1
T
J
= 130°C, I = 15%I
T(AV)
to
π
I
T(AV)
0.81
0.32
V
m
Threshold Voltage, High-level
Slope Resistance, High-level
V
(TO)2
r
T2
T
J
= 130°C, I =
π
I
T(AV)
to I
TSM
0.90
0.26
V
m
V
TM
Coefficients, Full Range
T
J
= 130°C, I = 10A to 6kA
V
TM
/V
FM
= A+ B Ln I +C I + D Sqrt I
A =
B =
C =
D =
0.8824
-4.46E-02
8.12E-05
1.54E-02
Minimum dV/dt
dV/dt
Exponential to V
DRM
T
j
=130°C, Gate Open
1000 Typ.
V/μs
Gate Trigger Current
I
GT
T
j
=25°C, V
D
=12V
200
mA
Gate Trigger Voltage
V
GT
T
j
=25°C, V
D
=12V
3.0
Volts
Non-Triggering Gate Voltage
V
GDM
T
j
=130°C, V
D
= V
DRM
0.25
Volts
Peak Forward Gate Current
I
GTM
4.0
Amp
Peak Reverse Gate Voltage
V
GRM
5
Volts
Thermal Characteristics
Characteristics
Symbol
Max.
Units
Thermal Resistance, Junction to Case
R
Θ
J-C
Per Module, both conducting
Per Junction, both conducting
0.0325
0.0650
°C/W
°C/W
Thermal Impedance Coefficients
Z
Θ
J-C
Z
Θ
J-C
= K
1
(1-exp(-t/
τ
1
))
+ K
2
(1-exp(-t/
τ
2
))
+ K
3
(1-exp(-t/
τ
3
))
+ K
4
(1-exp(-t/
τ
4
))
Per Module
K
1
= 8.03E-04
K
2
= 1.03E-02
K
3
= 1.64E-02
K
4
= 3.75E-02
τ
1
= 3.39E-04
τ
2
= 3.15E-03
τ
3
= 0.106
τ
4
= 2.066
0.01
Thermal Resistance, Case to Sink Lubricated
R
Θ
C-S
°C/W
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