參數(shù)資料
型號(hào): LDTA124EET1
廠商: 樂(lè)山無(wú)線電股份有限公司
英文描述: Bias Resistor Transistor
中文描述: 偏置電阻晶體管
文件頁(yè)數(shù): 1/4頁(yè)
文件大?。?/td> 203K
代理商: LDTA124EET1
LESHAN RADIO COMPANY, LTD.
P3–1/4
1
3
2
S
C-89
3
COLLECTOR
2
EMITTER
1
BASE
R1
R2
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
This new digital transistor is designed to replace a single
device
and
its external resistor bias network. The BRT (Bias Resistor
Tra-
ns
istor) contains
a single transistor with
a monolithic
bias network
consisting of
two resistors; a series base resistor and a base–emitter
resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the
SC–
89
package which is designed for low power surface
mount
applications.
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
L
DTA1
2
4EET1
Symbol
Value
Unit
Collector-Base Voltage
VCBO
VCEO
IC
50
Vdc
Collector-Emitter Voltage
50
Vdc
Collector Current
100
mAdc
MAXIMUM RATINGS
(TA = 25
°
C unless otherwise noted)
Ratin
g
DEVICE MARKING AND RESISTOR VALUES
Device
Marking
R1 (K)
R2 (K)
Shipping
L
DTA1
2
4EET1
6
B
22
22
3000/Tape & Reel
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation,
FR–4 Board (Note 1.) @ TA = 25
°
C
Derate above 25
°
C
PD
200
1.6
mW
mW/
°
C
Thermal Resistance, Junction to Ambient (Note 1.)
R
θ
JA
PD
600
°
C/W
Total Device Dissipation,
FR–4 Board (Note 2.) @ TA = 25
°
C
Derate above 25
°
C
300
2.4
mW
mW/
°
C
Thermal Resistance, Junction to Ambient (Note 2.)
R
θ
JA
TJ, Tstg
400
°
C/W
Junction and Storage Temperature Range
–55 to +150
°
C
1. FR–4 @ Minimum Pad
2. FR–4 @ 1.0
×
1.0 Inch Pad
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