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參數(shù)資料
| 型號(hào)： | LET9060C |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | RF POWER TRANSISTORS Ldmos Enhanced Technology |
| 中文描述： | RF功率晶體管LDMOS的增強(qiáng)技術(shù) |
| 文件頁數(shù)： | 5/5頁 |
| 文件大小： | 36K |
| 代理商： | LET9060C |
5/5
LET9060C
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PDF描述 |
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| LET9060S | RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package |
| LET9085 | RF POWER TRANSISTORS Ldmos Enhanced Technology |
| LET9130 | RF POWER TRANSISTORS Ldmos Enhanced Technology |
| LF120 | Very Low Drop Voltage Regulator with Inhabit(帶禁止的低壓差電壓穩(wěn)壓器) |
| LF00AB | Very Low Drop Voltage Regulator with Inhabit(帶禁止的低壓差電壓穩(wěn)壓器) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LET9060F | 功能描述:射頻MOSFET電源晶體管 RF Power LdmoST 60W 18 dB 945MHz RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| LET9060S | 功能描述:射頻MOSFET電源晶體管 RF PWR Trans LdmoST N-Ch 28V 1GHz ESD RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| LET9060STR | 功能描述:射頻MOSFET電源晶體管 RF PWR Trans LdmoST N-Ch 28V 1GHz ESD RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| LET9060TR | 功能描述:射頻MOSFET電源晶體管 RF PWR Trans LdmoST N-Ch 28V 1GHz ESD RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| LET9070CB | 制造商:STMicroelectronics 功能描述:Trans RF MOSFET N-CH 80V 12A 3-Pin Case M-243 制造商:STMicroelectronics 功能描述:POWER R.F. - Trays 制造商:STMicroelectronics 功能描述:MOSF RF N CH 80V 12A M243 制造商:STMicroelectronics 功能描述:RF PWR Trans LdmoST 28V 70W 16dB 945MHz |
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