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參數(shù)資料
| 型號： | LF00C |
| 廠商： | 意法半導體 |
| 元件分類： | 基準電壓源/電流源 |
| 英文描述： | VERY LOW DROP VOLTAGE REGULATORS WITH INHIBIT |
| 中文描述： | 極低降穩(wěn)壓器與抑制研究 |
| 文件頁數(shù)： | 9/32頁 |
| 文件大?。?/td> | 260K |
| 代理商： | LF00C |
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ELECTRICALCHARACTERISTICS FOR LF30AB
(refer to the test circuits, T
j
= 25
o
C,
C
i
= 0.1
μ
F, C
o
= 2.2
μ
F unless otherwise specified)
Symbol
Parameter
V
o
OutputVoltage
I
o
= 50 mA, V
i
= 5 V
I
o
= 50 mA, V
i
= 5 V-25<T
a
<85
o
C
V
i
Operating Input Voltage
I
o
= 500 mA
I
out
OutputCurrent Limit
V
o
LineRegulation
V
i
= 4 to16 V,
V
o
Load Regulation
V
i
= 4.3V
I
d
Quiescent Current
ON MODE
V
i
= 4 to16 V
V
i
= 4.3to 16 V I
o
= 500mA
OFF MODE V
i
= 6 V
SVR
Supply Voltage Rejection
I
o
= 5 mA V
i
= 5 V
±
1V
f = 120Hz
f = 1KHz
f = 10KHz
eN
OutputNoise Voltage
B = 10Hz to 100KHz
V
d
Dropout Voltage
I
o
= 200 mA
I
o
= 500 mA
V
il
Control Input Logic Low
-40< T
a
< 125
o
C
V
ih
Control Input Logic High
-40< T
a
< 125
o
C
I
i
Control Input Current
V
i
= 6 V,
C
O
OutputBypass Capacitance
ESR = 0.1to 10
I
o
= 0 to 500mA
Test Conditions
Min.
2.970
2.940
Typ.
3
Max.
3.030
3.060
16
Unit
V
V
V
A
mV
mV
1
3
3
I
o
= 5 mA
I
o
= 5to 500mA
15
15
I
o
= 0 mA
0.5
1
12
100
mA
mA
μ
A
50
81
76
65
50
0.2
0.4
dB
dB
dB
μ
V
V
V
V
V
μ
A
μ
F
0.35
0.7
0.8
2
V
c
= 6 V
10
10
2
ELECTRICALCHARACTERISTICS FOR LF30C
(refer to the testcircuits, T
j
= 25
o
C,
C
i
= 0.1
μ
F, C
o
= 2.2
μ
F unless otherwise specified)
Symbol
Parameter
V
o
OutputVoltage
I
o
= 50 mA, V
i
= 5 V
I
o
= 50 mA, V
i
= 5 V-25<T
a
<85
o
C
V
i
Operating Input Voltage
I
o
= 500 mA
I
out
OutputCurrent Limit
V
o
LineRegulation
V
i
= 4 to16 V,
V
o
Load Regulation
V
i
= 4.3V
I
d
Quiescent Current
ON MODE
V
i
= 4 to16 V
V
i
= 4.3to 16 V I
o
= 500mA
OFF MODE V
i
= 6 V
SVR
Supply Voltage Rejection
I
o
= 5 mA V
i
= 5 V
±
1V
f = 120Hz
f = 1KHz
f = 10KHz
eN
OutputNoise Voltage
B = 10Hz to 100KHz
V
d
Dropout Voltage
I
o
= 200 mA
I
o
= 500 mA
V
il
Control Input Logic Low
-40< T
a
< 125
o
C
V
ih
Control Input Logic High
-40< T
a
< 125
o
C
I
i
Control Input Current
V
i
= 6 V,
C
O
OutputBypass Capacitance
ESR = 0.1to 10
I
o
= 0 to 500mA
Test Conditions
Min.
2.94
2.88
Typ.
3
Max.
3.06
3.12
16
Unit
V
V
V
A
mV
mV
1
3
3
I
o
= 5 mA
I
o
= 5to 500mA
15
15
I
o
= 0 mA
0.5
1
12
100
mA
mA
μ
A
50
81
76
65
50
0.2
0.4
dB
dB
dB
μ
V
V
V
V
V
μ
A
μ
F
0.35
0.7
0.8
2
V
c
= 6 V
10
10
2
LF00AB/C
9/32
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