Lattice Semiconductor
ispXPGA Family Data Sheet
21
Absolute Maximum Ratings
1, 2, 3
1.8V
2.5V/3.3V
Supply Voltage (VCC) . . . . . . . . . . . . . . . . . . . . . . -0.5 to 2.5V . . . . . . . . . .-0.5 to 5.5V
PLL Supply Voltage (VCCP) . . . . . . . . . . . . . . . . . -0.5 to 2.5V . . . . . . . . . .-0.5 to 5.5V
Output Supply Voltage (VCCO) . . . . . . . . . . . . . . . -0.5 to 4.5V . . . . . . . . . .-0.5 to 4.5V
IEEE 1149.1 TAP Supply Voltage (VCCJ) . . . . . . . -0.5 to 4.5V . . . . . . . . . .-0.5 to 4.5V
Input Voltage Applied
4, 5 . . . . . . . . . . . . . . . . . . . . -0.5 to 5.5V . . . . . . . . . .-0.5 to 5.5V
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . -65 to 150
C. . . . . . . . . -65 to 150C
Junction Temperature (TJ) with Power Applied . . -55 to 150C. . . . . . . . . -55 to 150C
1. Stress above those listed under the “Absolute Maximum Ratings” may cause permanent damage to the device. Functional
operation of the device at these or any other conditions above those indicated in the operational sections of this specification
is not implied (while programming, following the programming specifications).
3. All voltages referenced to GND.
4. Overshoot and undershoot of -2V to (VIH (MAX) + 2) volts not to exceed 6V is permitted for a duration of <20ns.
5. A maximum of 64 I/Os per device with VIN > 3.6V is allowed.
Recommended Operating Conditions
E
2CMOS Erase Reprogram Specifications
Hot Socketing Characteristics
1, 2, 3, 4
Symbol
Parameter
Min
Max
Units
VCC
Supply Voltage for 1.8V device
1
1.65
1.95
V
Supply Voltage for 2.5V device
2.3
2.7
V
Supply Voltage for 3.3V device
3.0
3.6
V
VCCP
Supply Voltage for PLL and sysHSI blocks, 1.8V devices
1
1.65
1.95
V
Supply Voltage for PLL and sysHSI blocks, 2.5V devices
2.3
2.7
V
Supply Voltage for PLL and sysHSI blocks, 3.3V devices
3.0
3.6
V
VCCJ
Supply Voltage for IEEE 1149.1 Test Access Port for LVCMOS 1.8V
1.65
1.95
V
Supply Voltage for IEEE 1149.1 Test Access Port for LVCMOS 2.5V
2.3
2.7
V
Supply Voltage for IEEE 1149.1 Test Access Port for LVCMOS 3.3V
3.0
3.6
V
TJ (COM)
Junction Temperature Commercial Operation
0
85
C
TJ (IND)
Junction Temperature Industrial Operation
-40
105
C
1. sysHSI specification is valid for VCC and VCCP = 1.7V to 1.9V.
Parameter
Min
Max
Units
Erase/Reprogram Cycle
1
1,000
—
Cycles
1. Valid over commercial temperature range.
Symbol
Parameter
Condition
Min
Typ
Max
Units
IDK
Input or Tristated I/O Leakage Current 0 VIN 3.0V
—
+/-50
+/-800
A
1. Insensitive to sequence of VCC and VCCO when VCCO 1.0V. For VCCO > 1.0V, VCC min must be present. However, assumes monotonic
rise/fall rates for VCC and VCCO, provided (VIN - VCCO) 3.6V.
2. LVTTL, LVCMOS only.
3. 0 < VCC VCC (MAX), 0 < VCCO VCCO (MAX).
4. IDK is additive to IPU, IPD or IBH. Device defaults to pull-up until non-volatile cells are active.
SELECT
DEVICES
DISCONTINUED