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參數(shù)資料
| 型號： | LH1529GPTR |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 特殊繼電器 |
| 英文描述： | Solid State Relay, DUAL TRANSISTOR OUTPUT SOLID STATE RELAY, 3000 V ISOLATION-MAX, ROHS COMPLIANT, SMD, 8 PIN |
| 中文描述： | Solid State Relays Normally Open Form 1A 350V |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 110K |
| 代理商： | LH1529GPTR |
LH1529FPTR, LH1529GP, LH1529GPTR
Vishay Semiconductors
www.vishay.com
Rev. 1.7, 03-Aug-11
2
Document Number: 83828
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
Notes
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1)
Refer to reflow profile for soldering conditions for surface mounted devices.
Note
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluations. Typical values are for information only and are not part of the testing requirements.
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
SSR
INPUT
LED continuous forward current
LED reverse voltage
OUTPUT
DC or peak AC load voltage
Continuous DC load current
SSR
Ambient temperature range
Storage temperature range
Soldering temperature
(1)
Isolation test voltage (for 1 s)
TEST CONDITION
SYMBOL
VALUE
UNIT
I
F
V
R
50
6
mA
V
I
R
10 μA
I
L
50 μA
V
L
I
L
350
120
V
mA
T
amb
T
stg
T
sld
V
ISO
R
IO
R
IO
P
diss
- 40 to + 85
- 40 to + 125
260
3000
10
12
10
11
600
°C
°C
°C
t = 10 s max.
V
RMS
mW
Isolation resistance
V
IO
= 500 V, T
amb
= 25 °C
V
IO
= 500 V, T
amb
= 100 °C
Power dissipation
Optocoupler
INPUT
LED continuous forward current
LED reverse voltage
OUTPUT
Collector emitter breakdown voltage
Phototransistor power dissipation
I
F
V
R
50
6
mA
V
I
R
10 μA
BV
CEO
P
diss
30
150
V
mW
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SSR
INPUT
LED forward current,
switch turn-on
LED forward current,
switch turn-off
LED forward voltage
I
F
= 10 mA
OUTPUT
On-resistance
I
F
= 5 mA, I
L
= ± 50 mA
Off-resistance
I
F
= 0 mA, V
L
= ± 100 V
Current limit
I
F
= 5 mA, t = 5 ms
I
F
= 0 mA, V
L
= ± 100 V
I
F
= 0 mA, V
L
= ± 350 V
I
F
= 0 mA, V
L
= 1 V
I
F
= 0 mA, V
L
= 50 V
OPTOCOUPLER
LED forward current
I
F
= 10 mA
Saturation voltage
I
F
= 16 mA, I
C
= 2 mA
Dark current leakage
I
F
= 0 mA, V
CE
= 5 V
Trickle current leakage
I
F
= 5 μA, V
CE
= 5 V
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
I
L
= 100 mA, t = 10 ms
I
Fon
1.1
3
mA
V
L
= ± 300 V
I
Foff
0.2
1
mA
V
F
1
1.2
1.5
V
R
ON
R
OFF
I
Limit
I
O
I
O
C
O
C
O
20
25
G
mA
nA
μA
pF
pF
5000
210
0.6
170
250
200
1
Output off-state leakage current
Output capacitance pin 7 to pin 8
55
10
V
F
0.9
1.2
0.07
1.5
0.5
500
1
V
V
nA
μA
%
V
CEsat
I
CEO1
I
CEO2
CTR
DC
DC current transfer ratio
I
F
= 6.0 mA, V
CE
= 0.5 V
LH1529FP
LH1529GP,
LH1529GPTR
33
150
CTR
DC
100
150
%
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