參數(shù)資料
型號(hào)： LH28F320BFB-PBTL60
廠商： Sharp Corporation
英文描述： 32M (x16) Flash Memory
中文描述： 32M的（x16）的快閃記憶體
文件頁(yè)數(shù)： 27/37頁(yè)
文件大?。?/td> 700K
代理商： LH28F320BFB-PBTL60
LHF32FB7 25
Rev. 2.44
1.2.5 AC Characteristics - Write Operations
(1), (2)
NOTES:
1. The timing characteristics for reading the status register during block erase, full chip erase, (page buffer) program and
OTP program operations are the same as during read-only operations. Refer to AC Characteristics for read-only
operations.
2. A write operation can be initiated and terminated with either CE# or WE#.
3. Sampled, not 100% tested.
4. Write pulse width (t
WP
) is defined from the falling edge of CE# or WE# (whichever goes low last) to the rising edge of
CE# or WE# (whichever goes high first). Hence, t
WP
=t
WLWH
=t
ELEH
=t
WLEH
=t
ELWH
.
5. Write pulse width high (t
WPH
) is defined from the rising edge of CE# or WE# (whichever goes high first) to the falling
edge of CE# or WE# (whichever goes low last). Hence, t
WPH
=t
WHWL
=t
EHEL
=t
WHEL
=t
EHWL
.
6. V
PP
should be held at V
PP
=V
PPH1/2
until determination of block erase, full chip erase, (page buffer) program or OTP
program success (SR.1/3/4/5=0).
7. t
WHR0
(t
EHR0
) after the Read Query or Read Identifier Codes/OTP command=t
AVQV
+100ns.
8. Refer to Table 6 for valid address and data for block erase, full chip erase, (page buffer) program, OTP program or lock bit
configuration.
V
CC
=2.7V-3.6V, T
A
=0
°
C to +70
°
C
Symbol
Parameter
Notes
Min.
Max.
Unit
t
AVAV
t
PHWL
(t
PHEL
)
t
ELWL
(t
WLEL
)
t
WLWH
(t
ELEH
)
t
DVWH
(t
DVEH
)
t
AVWH
(t
AVEH
)
t
WHEH
(t
EHWH
)
t
WHDX
(t
EHDX
)
t
WHAX
(t
EHAX
)
t
WHWL
(t
EHEL
)
t
SHWH
(t
SHEH
)
t
VVWH
(t
VVEH
)
t
WHGL
(t
EHGL
)
t
QVSL
t
QVVL
Write Cycle Time
60
ns
RST# High Recovery to WE# (
CE#
) Going Low
3
150
ns
CE# (WE#) Setup to WE# (CE#) Going Low
0
ns
WE# (CE#) Pulse Width
4
45
ns
Data Setup to WE# (CE#) Going High
8
40
ns
Address Setup to WE# (CE#) Going High
8
45
ns
CE# (WE#) Hold from WE# (CE#) High
0
ns
Data Hold from WE# (CE#) High
0
ns
Address Hold from WE# (CE#) High
0
ns
WE# (CE#) Pulse Width High
5
15
ns
WP# High Setup to WE# (CE#) Going High
3
0
ns
V
PP
Setup to WE# (CE#) Going High
3
200
ns
Write Recovery before Read
30
ns
WP# High Hold from Valid SRD, RY/BY# High Z
3, 6
0
ns
V
PP
Hold from Valid SRD, RY/BY# High Z
3, 6
0
ns
t
WHR0
(t
EHR0
)
WE# (CE#) High to SR.7 Going "0"
3, 7
t
AVQV
+
50
ns
t
WHRL
(t
EHRL
)
WE# (CE#) High to RY/BY# Going Low
3
100
ns
相關(guān)PDF資料
PDF描述
LH28F320BFB-PTTL60 32M (x16) Flash Memory
LH28F320BFHE-PBTL60 32M (x16) Flash Memory
LH28F320BFHE-PBTLZ2 32M (x16) Flash Memory
LH28F320BJHE-PBTL90 32M-BIT ( 2Mbit x16 / 4Mbit x8 )Boot Block Flash MEMORY(32M位( 2M位 x16 / 4M位 x8 )Boot Block 閃速存儲(chǔ)器)
LH28F320BJHE-PTTL90 32M (2M x16/4M x 8)Boot Block Flash MEMORY(32M (2M x16/4M x 8)Boot Block 閃速存儲(chǔ)器)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
LH28F320BFB-PTTL60 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:32M (x16) Flash Memory
LH28F320BFE-PBTL60 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Flash ROM
LH28F320BFE-PTTL60 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Flash ROM
LH28F320BFE-PTTL70 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Flash ROM
LH28F320BFHB-PBTL60 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:32M (x16) Flash Memory
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*