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參數(shù)資料
| 型號： | LH28F320BFB-PTTL60 |
| 廠商： | Sharp Corporation |
| 英文描述： | 32M (x16) Flash Memory |
| 中文描述： | 32M的（x16）的快閃記憶體 |
| 文件頁數(shù)： | 22/37頁 |
| 文件大?。?/td> | 700K |
| 代理商： | LH28F320BFB-PTTL60 |
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LHF32FB5 20
NOTES:
1. All currents are in RMS unless otherwise noted. Typical values are the reference values at V
CC
=3.0V and T
A
=+25
°
C
unless V
CC
is specified.
2. I
CCWS
and I
CCES
are specified with the device de-selected. If read or (page buffer) program is executed while in block
erase suspend mode, the device
’
s current draw is the sum of I
CCES
and I
CCR
or I
CCW
. If read is executed while in (page
buffer) program suspend mode, the device
’
s current draw is the sum of I
CCWS
and I
CCR
.
3. Block erase, full chip erase, (page buffer) program and OTP program are inhibited when V
PP
≤
V
PPLK
, and not guaranteed
in the range between V
PPLK
(max.) and V
PPH1
(min.), between V
PPH1
(max.) and V
PPH2
(min.) and above V
PPH2
(max.).
4. The Automatic Power Savings (APS) feature automatically places the device in power save mode after read cycle
completion. Standard address access timings (t
AVQV
) provide new data when addresses are changed.
5. Sampled, not 100% tested.
6. V
PP
is not used for power supply pin. With V
PP
≤
V
PPLK
, block erase, full chip erase, (page buffer) program and OTP
program cannot be executed and should not be attempted.
Applying 12V±0.3V to V
PP
provides fast erasing or fast programming mode. In this mode, V
PP
is power supply pin and
supplies the memory cell current for block erasing and (page buffer) programming. Use similar power supply trace widths
and layout considerations given to the V
CC
power bus.
Applying 12V±0.3V to V
PP
during erase/program can only be done for a maximum of 1,000 cycles on each block. V
PP
may be connected to 12V±0.3V for a total of 80 hours maximum.
7. The operating current in dual work is the sum of the operating current (read, erase, program) in each plane.
8. Includes RY/BY#.
V
IL
Input Low Voltage
5
-0.4
0.4
V
V
IH
Input High Voltage
5
2.4
V
CCQ
+ 0.4
V
V
OL
Output Low Voltage
5,8
0.2
V
V
CC
=V
CC
Min.,
V
CCQ
=V
CCQ
Min.,
I
OL
=100
μ
A
V
CC
=V
CC
Min.,
V
CCQ
=V
CCQ
Min.,
I
OH
=-100μA
V
OH
Output High Voltage
5
V
CCQ
-0.2
V
V
PPLK
V
PP
Lockout during Normal
Operations
V
PP
during Block Erase, Full Chip
Erase, (Page Buffer) Program or OTP
Program Operations
V
PP
during Block Erase, Full Chip
Erase, (Page Buffer) Program or OTP
Program Operations
V
CC
Lockout Voltage
3,5,6
0.4
V
V
PPH1
6
1.65
3.0
3.6
V
V
PPH2
6
11.7
12
12.3
V
V
LKO
1.5
V
V
CC
=2.7V-3.6V
Symbol
Parameter
Notes
Min.
Typ.
Max.
Unit
Test Conditions
Rev. 2.44
DC Characteristics (Continued)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| LH28F320BFHE-PBTL60 | 32M (x16) Flash Memory |
| LH28F320BFHE-PBTLZ2 | 32M (x16) Flash Memory |
| LH28F320BJHE-PBTL90 | 32M-BIT ( 2Mbit x16 / 4Mbit x8 )Boot Block Flash MEMORY(32M位( 2M位 x16 / 4M位 x8 )Boot Block 閃速存儲器) |
| LH28F320BJHE-PTTL90 | 32M (2M x16/4M x 8)Boot Block Flash MEMORY(32M (2M x16/4M x 8)Boot Block 閃速存儲器) |
| LH28F320S3-L11 | 16 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LH28F320BFE-PBTL60 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Flash ROM |
| LH28F320BFE-PTTL60 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Flash ROM |
| LH28F320BFE-PTTL70 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Flash ROM |
| LH28F320BFHB-PBTL60 | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:32M (x16) Flash Memory |
| LH28F320BFHB-PTTL60 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Flash ROM |
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