參數(shù)資料
型號： LH28F320BFHE-PBTL60
廠商： Sharp Corporation
英文描述： 32M (x16) Flash Memory
中文描述： 32M的（x16）的快閃記憶體
文件頁數(shù)： 11/37頁
文件大小： 693K
代理商： LH28F320BFHE-PBTL60
LHF32FB4 9
Rev. 2.44
NOTES:
1. See DC Characteristics for V
IL
or V
IH
voltages.
2. X can be V
IL
or V
IH
.
3. RST# at GND±0.2V ensures the lowest power consumption.
4. Command writes involving block erase, full chip erase, (page buffer) program or OTP program are reliably
executed when V
CC
=2.7V-3.6V.
5. Refer to Table 6 for valid D
IN
during a write operation.
6. Never hold OE# low and WE# low at the same timing.
7. Refer to Appendix of LH28F320BF series for more information about query code.
8. RY/BY# is V
OL
when the WSM (Write State Machine) is executing internal block erase, full chip erase,
(page buffer) program or OTP program algorithms. It is High Z during when the WSM is not busy, in
block erase suspend mode (with program and page buffer program inactive), (page buffer) program suspend
mode, or reset mode.
Table 5. Bus Operation
(1, 2)
Mode
Notes
RST#
CE#
OE#
WE#
Address
DQ
0-15
RY/BY#
(8)
X
Read Array
6
V
IH
V
IH
V
IH
V
IL
V
IL
V
IL
V
IH
X
V
IL
V
IH
X
V
IH
V
IH
X
X
D
OUT
High Z
Output Disable
X
X
Standby
X
High Z
X
Reset
3
X
X
X
High Z
High Z
Read Identifier
Codes/OTP
6
V
IH
V
IL
V
IL
V
IH
See
Table 3 and
Table 4
See
Appendix
X
See
Table 3 and
Table 4
See
Appendix
D
IN
X
Read Query
6,7
V
IH
V
IL
V
IL
V
IH
X
Write
4,5,6
V
IH
V
IL
V
IH
V
IL
X
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