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參數(shù)資料
| 型號： | LH28F400SUHT |
| 廠商： | Sharp Corporation |
| 英文描述： | 4Mbit(512Kbit x 8,256 Kbit x 16) 5V Single Voltage Flash Memory |
| 中文描述： | 的4Mb（512Kbit x 8256千位× 16）5V單電壓閃存 |
| 文件頁數(shù)： | 28/35頁 |
| 文件大?。?/td> | 294K |
| 代理商： | LH28F400SUHT |
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LH28F400SU-NC
4M (512K × 8, 256K × 16) Flash Memory
28
Figure 22. AC Waveforms for Command Write Operations
ADDRESSES (A)
(NOTE 1)
V
IH
V
IL
A
IN
V
IH
V
IL
A
IN
D
IN
D
IN
D
IN
D
IN
D
OUT
CE (E)
V
IH
V
IL
OE (G)
V
IH
V
IL
WE (W)
V
IH
V
IL
DATA (D/Q)V
IH
V
IL
RY/BY (R)V
OH
V
OL
RP (P)
V
IH
V
IL
t
AVAV
t
AVAV
t
WHGL
t
WHWL
t
WLWH
t
DVWH
t
PHWL
t
RHPL
t
QVVL
ADDRESSES (A)
(NOTE 2)
t
AVWH
t
WHAX
t
AVWH
t
WHAX
t
ELWL
t
WHEH
t
WHQV 1, 2
t
GHWL
t
WHDX
t
WHRL
(NOTE 4)
t
VPWH
28F400SUT-NC60-20
(NOTE 3)
HIGH-Z
WRITE
DATA-WRITE
OR ERASE
SETUP COMMAND
DEEP
POWER-DOWN
WRITE VALID
ADDRESS AND DATA
(DATA-WRITE) OR
ERASE CONFIRM
COMMAND
AUTOMATED
DATA-WRITE
OR ERASE
DELAY
NOTES:
1. This address string depicts Data-Write/Erase cycles with corresponding verification via ESRD.
2. This address string depicts Data-Write/Erase cycles with corresponding verification via CSRD.
3. This cycle is invalid when using CSRD for verification during Data-Write/Erase operations.
4. RP low transition is only to show t
RHPL
; not valid for above Read and Write cycles.
V
PP
(V)
V
PPH
V
PPL
READ
COMPATIBLE
STATUS
REGISTER DATA
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LH28F400SUHT-NC80 | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:4Mbit(512Kbit x 8,256 Kbit x 16) 5V Single Voltage Flash Memory |
| LH28F400SU-LC | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:4M (512K 】 8, 256K 】 16) Flash Memory |
| LH28F400SUN | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:4Mbit(512Kbit x 8,256Kbit x 16) 3.3V Flash Memory |
| LH28F400SU-NC | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:4M (512K 】 8, 256K 】 16) Flash Memory |
| LH28F400SUN-LC12 | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:4Mbit(512Kbit x 8,256Kbit x 16) 3.3V Flash Memory |
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