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參數(shù)資料
| 型號(hào)： | LL46 |
| 廠商： | Diodes Inc. |
| 英文描述： | SURFACE MOUNT SCHOTTKY BARRIER DIODE |
| 中文描述： | 表面貼裝肖特基勢(shì)壘二極管 |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大?。?/td> | 49K |
| 代理商： | LL46 |
D
S
30074 Rev. A-2
1 of 1
LL46
LL46
SURFACE MOUNT SCHOTTKY BARRIER DIODE
Features
High Reverse Breakdown Voltage
Low Turn-On Voltage
Guard Ring Construction for Transient
Protection
Maximum Ratings
@ T
A
= 25 C unless otherwise specified
Notes:
1. Valid provided that electrodes are kept at ambient temperature.
2. t < 300 s, Duty Cycle < 2%.
Electrical Characteristics
@ T
A
= 25 C unless otherwise specified
Characteristic
Symbol
V
RRM
V
RWM
V
R
I
FM
I
O
I
FRM
I
FSM
P
d
R
JA
T
j
, T
STG
LL46
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Forward Continuous Current (Note 1)
Average Rectified Output Current (Note 1)
100
V
150
75
350
750
200
500
mA
mA
mA
mA
mW
K/W
C
Repetitive Peak Forward Current (Note 1)
Non-Repetitive Peak Forward Surge Current @ t = 10ms
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
@ t
1.0s
-55 to +125
Characteristic
Symbol
V
(BR)R
Min
100
Typ
Max
Unit
V
Test Condition
I
RS
= 10 A (pulses)
V
R
= 1.5V
V
R
= 1.5V, T
j
= 60 C
V
R
= 10V
V
R
= 10V, T
j
= 60 C
V
R
= 50V
V
R
= 50V, T
j
= 60 C
V
R
= 75V
V
R
= 75V, T
j
= 60 C
I
F
= 0.1mA
I
F
= 10mA
I
F
= 250mA
V
R
= 0V, f = 1.0MHz
V
R
= 1.0V, f = 1.0MHz
Reverse Breakdown Voltage
Reverse Leakage Current (Note 2)
I
R
0.5
5.0
0.8
7.5
2.0
15
5.0
20
A
Forward Voltage Drop (Note 2)
V
F
0.25
0.45
1.00
V
Junction Capacitance
C
j
10
6.0
pF
Case: MiniMELF, Glass
Terminals: Solderable per MIL-STD-202,
Method 208
Marking: Cathode Band Only
Polarity: Cathode Band
Weight: 0.05 grams (approx.)
Mechanical Data
MiniMELF
Min
Dim
A
B
C
Max
3.30
3.70
1.30
1.60
0.28
0.50
All Dimensions in mm
A
C
B
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