參數(shù)資料
型號: LLE18300
廠商: NXP Semiconductors N.V.
英文描述: NPN microwave power transistor
中文描述: npn型微波功率晶體管
文件頁數(shù): 3/12頁
文件大?。?/td> 89K
代理商: LLE18300
1999 Apr 22
3
Philips Semiconductors
Product specification
NPN microwave power transistor
LLE18300X
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1.
Up to 0.2 mm from ceramic.
SYMBOL
PARAMETER
CONDITIONS
MIN.
65
MAX.
UNIT
V
CBO
V
CER
V
CEO
V
EBO
I
C
P
i
P
tot
T
stg
T
j
T
sld
collector-base voltage
collector-emitter voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
input power
total power dissipation
storage temperature
junction temperature
soldering temperature
open emitter
R
BE
= 220
open base
open collector
45
30
15
3
6
8
50
+150
200
235
V
V
V
V
A
W
W
°
C
°
C
°
C
f = 1.85 GHz; V
CE
= 24 V; class AB
T
mb
= 75
°
C
t
10 s; 1
T
mb
75
°
C.
(I) Region of permissible DC operation.
(II) Permissible extension provided R
BE
220
.
Fig.2 DC SOAR.
10
2
MBD734
10
1
10
1
10
1
VCE
IC
(A)
Ι
ΙΙ
Fig.3 Power derating curve.
0
50
100
200
20
0
MEA577
150
Tmb
o
Ptot
(W)
40
60
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