參數(shù)資料
型號(hào): LLE18300X
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: NPN microwave power transistor
中文描述: L BAND, Si, NPN, RF POWER TRANSISTOR
文件頁(yè)數(shù): 4/12頁(yè)
文件大?。?/td> 89K
代理商: LLE18300X
1999 Apr 22
4
Philips Semiconductors
Product specification
NPN microwave power transistor
LLE18300X
THERMAL CHARACTERISTICS
CHARACTERISTICS
T
mb
= 25
°
C unless otherwise specified.
APPLICATION INFORMATION
Microwave performance up to T
mb
= 25
°
C in a common emitter class AB amplifier.
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
R
th j-mb
R
th mb-h
thermal resistance from junction to mounting base
thermal resistance from mounting base to heatsink
T
j
= 100
°
C
2
0.2
K/W
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I
CBO
V
(BR)CER
V
(BR)CBO
V
(BR)EBO
h
FE
collector cut-off current
collector-emitter breakdown voltage
collector-base breakdown voltage
emitter-base breakdown voltage
DC current gain
I
E
= 0; V
CB
= 20 V
I
C
= 15 mA; R
BE
= 220
I
C
= 15 mA
I
E
= 15 mA
I
C
= 1 A; V
CE
= 3 V
30
45
3
15
3
100
mA
V
V
V
MODE OF
OPERATION
f
(GHz)
V
CE
(V)
I
CQ
(A)
P
L1
(W)
G
po
(dB)
η
C
(%)
Z
i
; Z
L
(
)
Class AB (CW) 1.85
24
0.1
27
typ. 30
7.8
typ. 8.6
typ. 40
see Figs 8
and 9
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