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參數(shù)資料
| 型號： | LM1042N |
| 廠商： | NATIONAL SEMICONDUCTOR CORP |
| 元件分類： | 模擬信號調(diào)理 |
| 英文描述： | Fluid Level Detector |
| 中文描述： | SPECIALTY ANALOG CIRCUIT, PDIP16 |
| 封裝： | N16A |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 170K |
| 代理商： | LM1042N |
Electrical Characteristics
V
CC
e
13V, T
A
within operating range except where stated otherwise. C
T
e
22
m
F, R
T
e
12k (Continued)
Tested Limits
(Note 2)
Design Limits
(Note 3)
Symbol
Parameter
Conditions
Units
Min
Max
Min
Typ
Max
V
1
Probe 1 Input
Voltage Range
V
CC
e
9V to 18V
V
CC
e
7.5V, I
4
k
2.5 mA
(V
REG
e
6.0V)
1
5
1
1
5
V
V
3.5
V
5
Probe 1 Open
Circuit Threshold
At Pin 5
V
REG
b
0.7 V
REG
b
0.5 V
REG
b
0.85 V
REG
b
0.6 V
REG
b
0.35
V
V
5
Probe 1 Short
Circuit Threshold
0.5
0.7
0.35
0.6
0.85
V
I
14
Pin 14 Input
Leakage Current
Pin 14
e
4V
b
2.0
2.0
2.0
nA
I
1
Pin 1 Input
Leakage Current
Pin 1
e
300 mV
b
5.0
5.0
1.5
5.0
nA
T
R
Repeat Period
C
R
e
22
m
F (Note 5)
12
28
9.1
17
36
s
C
R
Discharge Time
C
R
e
22
m
F
70
135
ms
C
M
Memory Capacitor Value
0.47
m
F
C
1
Input Capacitor Value
0.47
m
F
Sensitivity fo Electrostatic DischargeD
Pins 7, 10, 13, and 14 will withstand greater than 1500V when tested using 100 pF and 1500
X
in accordance with National Semiconductor standard ESD test
procedures.
All other pins will withstand in excess of 2 kV.
Note 1:
Test circuit for over voltage capability at pins 3, 6, 8.
TL/H/8709–2
Note 2:
Guaranteed and 100% production tested at 25
§
C. These limits are used to calculate outgoing quality levels.
Note 3:
Limits guardbanded to include parametric variations. T
A
e b
40
§
C to
a
80
§
C and from V
CC
e
7.5V to 18V. These limits are not used to calculate AOQL
figures.
Note 4:
Variations over temperature range are not production tested.
Note 5:
Time for first repeat period, see Figure 6.
Note 6:
Probe 1 amplifier tests are measured with pin 12 ramp voltage held between the T
3
and T
4
conditions (pin 12
&
1.1V) having previously been held above
4.1V to simulate ramp action. See Figure 5.
Note 7:
When measuring gain separate ground wire sensing is required at pin 2 to ensure sufficiently accurate results.
Linearity is defined as the difference between the predicted value of V
B
(V
B
*
) and the measured value.
Note 8:
Above T
A
e
25
§
C derate with
i
jA
e
70
§
C/W.
TL/H/8709–15
For probe 1 and probe 2DGain (G)
e
V
C
b
V
A
Linearity
e
V
B
V
c
b
V
a
Input offset
e
D
V
C
G
b
V
c
(
V
B
*
b
1
c
100%
V
B
*
e
V
A
a
G(V
b
b
V
a
)
3
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