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參數(shù)資料
| 型號： | LM113-1H |
| 廠商： | NATIONAL SEMICONDUCTOR CORP |
| 元件分類： | 基準(zhǔn)電壓源/電流源 |
| 英文描述： | CAP FILM MKT .33UF 100VDC 10% |
| 中文描述： | 1-OUTPUT TWO TERM VOLTAGE REFERENCE, 1.22 V, MBCY2 |
| 封裝： | METAL CAN, TO-46, 2 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 126K |
| 代理商： | LM113-1H |
Absolute Maximum Ratings
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.
(Note 3)
Power Dissipation (Note 1)
100 mW
Reverse Current
50 mA
Forward Current
50 mA
Storage Temperature Range
b
65
§
C to
a
150
§
C
Lead Temperature
(Soldering, 10 seconds)
300
§
C
Operating Temperature Range
LM113
LM313
b
55
§
C to
a
125
§
C
0
§
C to
a
70
§
C
Electrical Characteristics
(Note 2)
Parameter
Conditions
Min
Typ
Max
Units
Reverse Breakdown Voltage
LM113/LM313
LM113-1
LM113-2
I
R
e
1 mA
1.160
1.210
1.195
1.220
1.22
1.22
1.280
1.232
1.245
V
V
V
Reverse Breakdown Voltage
Change
0.5 mA
s
I
R
s
20 mA
6.0
15
mV
Reverse Dynamic Impedance
I
R
e
1 mA
I
R
e
10 mA
0.2
0.25
1.0
0.8
X
X
Forward Voltage Drop
I
F
e
1.0 mA
0.67
1.0
V
RMS Noise Voltage
10 Hz
s
f
s
10 kHz
I
R
e
1 mA
5
m
V
Reverse Breakdown Voltage
Change with Current
0.5 mA
s
I
R
s
10 mA
T
MIN
s
T
A
s
T
MAX
15
mV
Breakdown Voltage Temperature
Coefficient
1.0 mA
s
I
R
s
10 mA
T
MIN
s
T
A
s
T
MAX
0.01
%/
§
C
Note 1:
For operating at elevated temperatures, the device must be derated based on a 150
§
C maximum junction and a thermal resistance of 80
§
C/W junction to
case or 440
§
C/W junction to ambient.
Note 2:
These specifications apply for T
A
e
25
§
C, unless stated otherwise. At high currents, breakdown voltage should be measured with lead lengths less than
(/4
inch. Kelvin contact sockets are also recommended. The diode should not be operated with shunt capacitances between 200 pF and 0.1
m
F, unless isolated by at
least a 100
X
resistor, as it may oscillate at some currents.
Note 3:
Refer to the following RETS drawings for military specifications: RETS113-1X for LM113-1, RETS113-2X for LM113-2 or RETS113X for LM113.
Typical Performance Characteristics
Temperature Drift
Reverse Dynamic Impedance
Reverse Characteristics
TL/H/5713–3
2
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LM113-1H/883 | 制造商:Texas Instruments 功能描述: |
| LM113-1H-QMLV | 功能描述:基準(zhǔn)電壓& 基準(zhǔn)電流 RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Voltage References 拓?fù)浣Y(jié)構(gòu):Shunt References 參考類型:Programmable 輸出電壓:1.24 V to 18 V 初始準(zhǔn)確度:0.25 % 平均溫度系數(shù)（典型值）:100 PPM / C 串聯(lián) VREF - 輸入電壓（最大值）: 串聯(lián) VREF - 輸入電壓（最小值）: 分流電流（最大值）:60 mA 最大工作溫度:+ 125 C 封裝 / 箱體:SOT-23-3L 封裝:Reel |
| LM113-1H-SMD | 功能描述:基準(zhǔn)電壓& 基準(zhǔn)電流 RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Voltage References 拓?fù)浣Y(jié)構(gòu):Shunt References 參考類型:Programmable 輸出電壓:1.24 V to 18 V 初始準(zhǔn)確度:0.25 % 平均溫度系數(shù)（典型值）:100 PPM / C 串聯(lián) VREF - 輸入電壓（最大值）: 串聯(lián) VREF - 輸入電壓（最小值）: 分流電流（最大值）:60 mA 最大工作溫度:+ 125 C 封裝 / 箱體:SOT-23-3L 封裝:Reel |
| LM1131NW | 制造商:National Semiconductor Corporation 功能描述: 制造商:Texas Instruments 功能描述: |
| LM113-1WG-QMLV | 功能描述:基準(zhǔn)電壓& 基準(zhǔn)電流 RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Voltage References 拓?fù)浣Y(jié)構(gòu):Shunt References 參考類型:Programmable 輸出電壓:1.24 V to 18 V 初始準(zhǔn)確度:0.25 % 平均溫度系數(shù)（典型值）:100 PPM / C 串聯(lián) VREF - 輸入電壓（最大值）: 串聯(lián) VREF - 輸入電壓（最小值）: 分流電流（最大值）:60 mA 最大工作溫度:+ 125 C 封裝 / 箱體:SOT-23-3L 封裝:Reel |
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