VCC 10 A OUT GND IN+ IN Epi-FET Diodes Resistors Transistors COMP" />
參數(shù)資料
型號: LM2903DRG3
廠商: Texas Instruments
文件頁數(shù): 5/12頁
文件大?。?/td> 0K
描述: IC COMPARATOR DIFF DUAL 8SOIC
標(biāo)準(zhǔn)包裝: 1
類型: 差分
元件數(shù): 2
輸出類型: CMOS,MOS,開路集電極,TTL
電壓 - 電源,單路/雙路(±): 2 V ~ 36 V,±1 V ~ 18 V
電壓 - 輸入偏移(最小值): 7mV @ 30V
電流 - 輸入偏壓(最小值): 0.25µA @ 5V
電流 - 輸出(標(biāo)準(zhǔn)): 20mA
電流 - 靜態(tài)(最大值): 2.5mA
工作溫度: -40°C ~ 125°C
封裝/外殼: 8-SOIC(0.154",3.90mm 寬)
安裝類型: 表面貼裝
包裝: 標(biāo)準(zhǔn)包裝
其它名稱: 296-27463-6
80-A
Current Regulator
80 A
60 A
10 A
VCC
10 A
OUT
GND
IN+
IN
Epi-FET
Diodes
Resistors
Transistors
COMPONENT COUNT
1
2
30
OUT
IN
IN+
SLCS005X – OCTOBER 1979 – REVISED JULY 2013
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
Symbol (Each Comparator)
Schematic (Each Comparator)
Current values shown are nominal.
2
Copyright 1979–2013, Texas Instruments Incorporated
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