參數(shù)資料
型號： LM3045
廠商： National Semiconductor Corporation
英文描述： LM3045/LM3046/LM3086 Transistor Arrays
中文描述： LM3045/LM3046/LM3086晶體管陣列
文件頁數(shù)： 2/6頁
文件大?。?/td> 179K
代理商： LM3045
Absolute Maximum Ratings
(T
A
e
25
§
C)
If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
LM3045
Each
Transistor
Power Dissipation:
T
A
e
25
§
C
300
T
A
e
25
§
C to 55
§
C
T
A
l
55
§
C
T
A
e
25
§
C to 75
§
C
300
T
A
l
75
§
C
Derate at 8
Collector to Emitter Voltage, V
CEO
15
Collector to Base Voltage, V
CBO
20
Collector to Substrate Voltage, V
CIO
(Note 1)
20
Emitter to Base Voltage, V
EBO
5
Collector Current, I
C
50
Operating Temperature Range
b
55
§
C to
a
125
§
C
Storage Temperature Range
b
65
§
C to
a
150
§
C
Soldering Information
Dual-In-Line Package Soldering (10 Sec.)
260
§
C
Small Outline Package
Vapor Phase (60 Seconds)
Infrared (15 Seconds)
See AN-450 ‘‘Surface Mounting Methods and Their Effect on Product Reliability’’ for other methods of soldering surface mount
devices.
LM3046/LM3086
Each
Transistor
Total
Package
Total
Package
Units
750
300
300
750
750
mW
mW
mW/
§
C
mW
mW/
§
C
V
Derate at 6.67
750
15
20
V
20
V
5
V
50
b
40
§
C to
a
85
§
C
b
65
§
C to
a
85
§
C
mA
260
§
C
215
§
C
220
§
C
Electrical Characteristics
(T
A
e
25
§
C unless otherwise specified)
Limits
Limits
Parameter
Conditions
LM3045, LM3046
LM3086
Units
Min
Typ
Max
Min
Typ
Max
Collector to Base Breakdown Voltage (V
(BR)CBO
)
Collector to Emitter Breakdown Voltage (V
(BR)CEO
)
Collector to Substrate Breakdown
Voltage (V
(BR)CIO
)
Emitter to Base Breakdown Voltage (V
(BR)EBO
)
Collector Cutoff Current (I
CBO
)
Collector Cutoff Current (I
CEO
)
Static Forward Current Transfer
Ratio (Static Beta) (h
FE
)
I
C
e
10
m
A, I
E
e
0
I
C
e
1 mA, I
B
e
0
I
C
e
10
m
A, I
CI
e
0
20
60
20
60
V
15
24
15
24
V
20
60
20
60
V
I
E
10
m
A, I
C
e
0
V
CB
e
10V, I
E
e
0
V
CE
e
10V, I
B
e
0
V
CE
e
3V
5
7
5
7
V
0.002
40
0.002
100
nA
0.5
5
m
A
I
C
e
10 mA
I
C
e
1 mA
I
C
e
10
m
A
100
100
40
100
40
100
D
54
54
Input Offset Current for Matched
Pair Q
1
and Q
2
l
I
O1
b
I
IO2
l
Base to Emitter Voltage (V
BE
)
V
CE
e
3V, I
C
e
1 mA
0.3
2
m
A
V
CE
e
3V
I
E
e
1 mA
I
E
e
10 mA
0.715
0.715
V
D
0.800
0.800
Magnitude of Input Offset Voltage for
Differential Pair
l
V
BE1
b
V
BE2
l
Magnitude of Input Offset Voltage for Isolated
Transistors
l
V
BE3
b
V
BE4
l
,
l
V
BE4
b
V
BE5
l
,
l
V
BE5
b
V
BE3
Temperature Coefficient of Base to
D
V
BE
V
CE
e
3V, I
C
e
1 mA
0.45
5
mV
V
CE
e
3V, I
C
e
1 mA
0.45
5
mV
V
CE
e
3V, I
C
e
1 mA
Emitter Voltage
D
T
b
1.9
b
1.9
mV/
§
C
Collector to Emitter Saturation Voltage (V
CE(SAT)
)
Temperature Coefficient of
D
V
10
I
B
e
1 mA, I
C
e
10 mA
V
CE
e
3V, I
C
e
1 mA
0.23
0.23
V
Input Offset Voltage
#
D
T
J
1.1
m
V/
§
C
Note 1:
The collector of each transistor of the LM3045, LM3046, and LM3086 is isolated from the substrate by an integral diode. The substrate (terminal 13) must
be connected to the most negative point in the external circuit to maintain isolation between transistors and to provide for normal transistor action.
2
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
LM3045 WAF 制造商:Texas Instruments 功能描述:
LM3045J 制造商:Texas Instruments 功能描述:
LM3045J/833B 制造商:National Semiconductor Corporation 功能描述: 制造商:Texas Instruments 功能描述:
LM3046 制造商:NSC 制造商全稱:National Semiconductor 功能描述:LM3045/LM3046/LM3086 Transistor Arrays
LM3046M 功能描述:達林頓晶體管 Transistor Array RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel
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