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參數(shù)資料
| 型號： | LM3045J |
| 廠商： | NATIONAL SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | CAP 6.3V 1000UF SOLID ELECT AXL |
| 中文描述： | 5 CHANNEL, VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 179K |
| 代理商： | LM3045J |
Electrical Characteristics
(Continued)
Parameter
Conditions
Min
Typ
Max
Units
Low Frequency Noise Figure (NF)
f
e
1 kHz, V
CE
e
3V,
I
C
e
100
m
A, R
S
e
1 k
X
3.25
dB
LOW FREQUENCY, SMALL SIGNAL EQUIVALENT CIRCUIT CHARACTERISTICS
Forward Current Transfer Ratio (h
fe
)
f
e
1 kHz, V
CE
e
3V,
I
C
e
1 mA
110 (LM3045, LM3046)
(LM3086)
Short Circuit Input Impednace (h
ie
)
3.5
k
X
Open Circuit Output Impedance (h
oe
)
15.6
m
mho
Open Circuit Reverse Voltage Transfer Ratio (h
re
)
1.8 x 10
b
4
ADMITTANCE CHARACTERISTICS
Forward Transfer Admittance (Y
fe
)
f
e
1 MHz, V
CE
e
3V,
I
C
e
1 mA
31
b
j 1.5
Input Admittance (Y
ie
)
0.3
a
J 0.04
Output Admittance (Y
oe
)
0.001
a
j 0.03
Reverse Transfer Admittance (Y
re
)
See Curve
Gain Bandwidth Product (f
T
)
V
CE
e
3V, I
C
e
3 mA
V
EB
e
3V, I
E
e
0
V
CB
e
3V, I
C
e
0
V
CS
e
3V, I
C
e
0
300
550
Emitter to Base Capacitance (C
EB
)
0.6
pF
Collector to Base Capacitance (C
CB
)
0.58
pF
Collector to Substrate Capacitance (C
CI
)
2.8
pF
Typical Performance Characteristics
Temperature for Each
Transistor
Cutoff Current vs Ambient
Typical Collector To Base
Temperature for Each
Transistor
Cutoff Current vs Ambient
Typical Collector To Emitter
Beta Ratio for Transistors Q
1
and Q
2
vs Emitter Current
Current-Transfer Ratio and
Typical Static Forward
TL/H/7950–2
Q
1
Q
2
vs Collector Current
for Matched Transistor Pair
Typical Input Offset Current
Offset Voltage for Differential
Pair and Paired Isolated
Voltage Characteristic and Input
Typical Static Base To Emitter
Transistors vs Emitter Current
TL/H/7950–3
3
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LM3045J/833B | 制造商:National Semiconductor Corporation 功能描述: 制造商:Texas Instruments 功能描述: |
| LM3046 | 制造商:NSC 制造商全稱:National Semiconductor 功能描述:LM3045/LM3046/LM3086 Transistor Arrays |
| LM3046M | 功能描述:達(dá)林頓晶體管 Transistor Array RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| LM3046M/NOPB | 功能描述:兩極晶體管 - BJT TRANSISTOR ARRAY RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| LM3046MX | 功能描述:達(dá)林頓晶體管 Transistor Array RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
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