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參數(shù)資料
| 型號(hào)： | LM313 |
| 廠商： | National Semiconductor Corporation |
| 英文描述： | Reference Diode |
| 中文描述： | 參考二極管 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 126K |
| 代理商： | LM313 |
Absolute Maximum Ratings
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.
(Note 3)
Power Dissipation (Note 1)
100 mW
Reverse Current
50 mA
Forward Current
50 mA
Storage Temperature Range
b
65
§
C to
a
150
§
C
Lead Temperature
(Soldering, 10 seconds)
300
§
C
Operating Temperature Range
LM113
LM313
b
55
§
C to
a
125
§
C
0
§
C to
a
70
§
C
Electrical Characteristics
(Note 2)
Parameter
Conditions
Min
Typ
Max
Units
Reverse Breakdown Voltage
LM113/LM313
LM113-1
LM113-2
I
R
e
1 mA
1.160
1.210
1.195
1.220
1.22
1.22
1.280
1.232
1.245
V
V
V
Reverse Breakdown Voltage
Change
0.5 mA
s
I
R
s
20 mA
6.0
15
mV
Reverse Dynamic Impedance
I
R
e
1 mA
I
R
e
10 mA
0.2
0.25
1.0
0.8
X
X
Forward Voltage Drop
I
F
e
1.0 mA
0.67
1.0
V
RMS Noise Voltage
10 Hz
s
f
s
10 kHz
I
R
e
1 mA
5
m
V
Reverse Breakdown Voltage
Change with Current
0.5 mA
s
I
R
s
10 mA
T
MIN
s
T
A
s
T
MAX
15
mV
Breakdown Voltage Temperature
Coefficient
1.0 mA
s
I
R
s
10 mA
T
MIN
s
T
A
s
T
MAX
0.01
%/
§
C
Note 1:
For operating at elevated temperatures, the device must be derated based on a 150
§
C maximum junction and a thermal resistance of 80
§
C/W junction to
case or 440
§
C/W junction to ambient.
Note 2:
These specifications apply for T
A
e
25
§
C, unless stated otherwise. At high currents, breakdown voltage should be measured with lead lengths less than
(/4
inch. Kelvin contact sockets are also recommended. The diode should not be operated with shunt capacitances between 200 pF and 0.1
m
F, unless isolated by at
least a 100
X
resistor, as it may oscillate at some currents.
Note 3:
Refer to the following RETS drawings for military specifications: RETS113-1X for LM113-1, RETS113-2X for LM113-2 or RETS113X for LM113.
Typical Performance Characteristics
Temperature Drift
Reverse Dynamic Impedance
Reverse Characteristics
TL/H/5713–3
2
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| LM313-155.52M | 制造商:CONNOR-WINFIELD 制造商全稱:Connor-Winfield Corporation 功能描述:5.0x7.0mm Surface Mount LVDS Clock Oscillator Series |
| LM313H | 功能描述:IC VREF SHUNT PREC 1.22V TO-46-2 RoHS:否 類別:集成電路 (IC) >> PMIC - 電壓基準(zhǔn) 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 基準(zhǔn)類型:串聯(lián)，精度 輸出電壓:4.5V 容差:±800µV 溫度系數(shù):1ppm/°C 輸入電壓:13.5 V ~ 22 V 通道數(shù):1 電流 - 陰極:- 電流 - 靜態(tài):7mA 電流 - 輸出:10mA 工作溫度:-55°C ~ 125°C 安裝類型:表面貼裝 封裝/外殼:20-LCC 供應(yīng)商設(shè)備封裝:20-CLCC 包裝:管件 |
| LM3146 | 制造商:NSC 制造商全稱:National Semiconductor 功能描述:LM3146 High Voltage Transistor Array |
| LM3146M | 制造商:NSC 制造商全稱:National Semiconductor 功能描述:LM3146 High Voltage Transistor Array |
| LM3146N | 制造商:NSC 制造商全稱:National Semiconductor 功能描述:LM3146 High Voltage Transistor Array |
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